Showing posts with label patent. Show all posts
Showing posts with label patent. Show all posts

Wednesday, April 25, 2018

US PATENT-Systems, apparatus, and methods of nonlinear terahertz (THz) magnetic resonance measurement


United States Patent 9945914
Inventors:
Hwang, Harold Young (Cambridge, MA, US) 
Lu, Jian (Medford, MA, US) 
Zhang, Yaqing (Cambridge, MA, US) 
Ofori-okai, Benjamin K. (Cambridge, MA, US) 
Nelson, Keith A. (Newton, MA, US) 
Li, Xian (Cambridge, MA, US) 

http://www.freepatentsonline.com/9945914.html

A nonlinear terahertz (THz) spectroscopy technique uses a sample illuminated by two THz pulses separately. The illumination generates two signals BA and BB, corresponding to the first and second THz pulse, respectively, after interaction with the sample. The interaction includes excitation of at least one ESR transition in the sample. The sample is also illuminated by the two THz pulses together, with an inter-pulse delay τ, generating a third signal BAB. A nonlinear signal BNL is then derived via BNL=BAB−BA−BB. This nonlinear signal BNL can be then processed (e.g., Fourier transform) to study the properties of the sample.

Saturday, April 7, 2018

US Patent-Fourier domain terahertz coherence tomography (TCT)


United States Patent 9927355
Inventors:
Giles, Robert H. (Upton, MA, US) 
Sharma, Gargi (Revere, MA, US) 
Joseph, Cecil S. (Lowell, MA, US) 

http://www.freepatentsonline.com/9927355.html

A single-shot terahertz imaging system including an interferometer and a terahertz spectrometer. The interferometer includes a beam splitter configured to receive input terahertz radiation and output first terahertz radiation and second terahertz radiation, a sample configured to reflect the first terahertz radiation, and a mirror configured to reflect the second terahertz radiation. The beam splitter is further configured to receive the reflected first terahertz radiation and the reflected second terahertz radiation, and output interfered terahertz radiation. The terahertz spectrometer is configured to measure the interfered terahertz radiation and includes a frequency dispersive element configured to receive the interfered terahertz radiation and output spatially dispersed terahertz radiation, and a terahertz radiation detector configured to determine the intensity of the spatially dispersed terahertz radiation.

Saturday, March 17, 2018

US Patent-Thickness determination and layer characterization using terahertz scanning reflectometry


United States Patent 9909986
Inventors:
Rahman, Anis (Hummelstown, PA, US) 
Rahman, Aunik K. (Hummelstown, PA, US) 

http://www.freepatentsonline.com/9909986.html


A terahertz scanning reflectometer system is described herein for in-situ measurement of polymer coating thickness, semiconductor wafer's surface sub-surface inspection in a non-destructive and non-invasive fashion with very high resolution (e.g., 25 nm or lower) and spectral profiling and imaging of surface and sub-surface of biological tissues (e.g., skin) in a non-invasive fashion

Tuesday, February 6, 2018

US Patent Application-Terahertz Wave Generating Device and Spectroscopic Device Using Same



United States Patent Application 20180031469
Inventors:
Aiko, Kenji (Tokyo, JP) 
Shimura, Kei (Tokyo, JP) 

http://www.freepatentsonline.com/y2018/0031469.html

A terahertz wave generating device according to the present invention comprises a fixed-wavelength pump optical laser that generates a single wavelength pump beam, a variable-wavelength laser that emits a seed beam and is capable of making the wavelength of the seed beam variable, a delay element that delays pulses of the pump beam and a first non-linear crystal that generates terahertz waves by receiving the seed beam, a first pump beam that is not delayed by the delay element and a second pump beam that is delayed by the delay element.

Monday, October 30, 2017

US Patent Application-METHOD FOR MEASURING AND DETERMINING A TERAHERTZ SPECTRUM OF A SAMPLE



United States Patent Application 20170307520
Inventors:
Hepp, Christian (Ettlingen, DE) 
Luettjohann, Stephan (Karlsruhe, DE) 

http://www.freepatentsonline.com/y2017/0307520.html


The invention relates to a method for measuring and determining a THz spectrum of a sample (17),
wherein two laser beams (1a, 2a) are superimposed, such that two parts (11, 12) of a superimposed laser radiation are generated, which have a beat frequency in the THz range,
wherein the first part (11) is introduced into an emitter (13) for generating a THz radiation (14), wherein the THz radiation (14) passes through the sample (17) and the characteristic transmission radiation (18) thus obtained is forwarded to a detector (15), wherein the detector (15) is activated by the second part (12) of the superimposed laser radiation,
wherein, by repetition with different beat frequencies, a measurement signal I(f) of the form I(f)=A(f)·cos[Φ(f)] is obtained for the sample (17),
wherein an auxiliary signal Ĩ(f) shifted by 90° is determined from the measurement signal I(f), with Ĩ(f)=A(f)·cos[Φ(f)±90°],
and wherein the THz spectrum S(f) of the sample (17) is determined by means of the auxiliary signal Ĩ(f), with S(f)=|z(f)|=|I(f)+iĨ(f)|. The invention provides a method for measuring and determining a THz spectrum in which an improved spectral resolution can be achieved in a simple manner.

Saturday, October 14, 2017

US Patent-Terahertz wave measuring device, measuring method, and measuring rig



United States Patent 9784610
Inventor:
Uchida, Hirohisa (Kyoto, JP) 

http://www.freepatentsonline.com/9784610.html

There is provided a terahertz wave measuring device including (1) a terahertz wave generation element that generates a terahertz wave by difference frequency generation based on excitation light that is incident to the terahertz wave generation element, the excitation light including a plurality of different wavelength components and being condensed so as to have a beam diameter of a predetermined size, (2) a structural body through which the terahertz wave is transmitted; and (3) a detector that detects an intensity of the terahertz wave that has been transmitted through the structural body, wherein the structural body includes a sample holder of a predetermined width that holds a sample, and the structural body is in close contact with or is joined to the terahertz wave generation element.

Wednesday, September 27, 2017

European Patent:Terahertz system


European Patent EP2509173
Inventor:
Sartorius, Bernd (Württembergallee, 22, 14052, Berlin, DE)

http://www.freepatentsonline.com/EP2509173B1.html

CLAIMS:
1. Terahertz system, comprising a beat signal generating device (1) which has - a first monomode laser (2) for generating radiation of a first wavelength (λ1); - a second monomode laser (3) for generating radiation of a second wavelength (λ2) different from the first wavelength (λ1); - a first and a second output port (11, 12); - a phase modulating unit (4) for modifying both the phase of radiation generated by the first laser and the phase of radiation generated the second laser (2, 3), wherein the beat signal generating device (1) is configured in such a way that - the radiation generated by the first laser (2) is transmitted through the second laser (3) and superposed with the radiation generated by the second laser (2) at the second output port (12), and - the radiation generated by the second laser (3) is transmitted through the first laser (2) and superposed with the radiation generated by the first laser (2) at the first output port (11), such that - a first beat signal (A) will be emitted at the first output port (11) and a second beat signal (B) will be emitted at the second output port (12), , wherein the first output port (11) of the beat signal generating device (1) is connected to a first component of the Terahertz system, wherein the first component is a Terahertz transmitter such that the first beat signal (A) is supplied to the Terahertz transmitter, characterized in that
the second output port (12) of the beat signal generating device (1) is connected to a second component of the Terahertz system, wherein the second component is a Terahertz receiver such that the second beat signal (B) is supplied to the Terahertz receiver, wherein the phase between the first beat signal (A) supplied to the Terahertz transmitter and the second beat signal (B) supplied to the Terahertz receiver can be adjusted by means of the phase modulating unit (4). 

2. The Terahertz system as claimed in claim 1, further comprising a plurality of straight optical waveguides (111-114) connecting the first laser (2) to the first output port (11) and to the phase modulating unit (4), respectively, and connecting the second laser (3) to the second output port (12) and to the phase modulating unit (4), respectively. 

3. The Terahertz system as claimed in claim 1 or 2, wherein the phase modulating unit (4) is an electro-optical phase modulating unit arranged between the first and the second laser (2, 3). 

4. The Terahertz system as claimed in one of the preceding claims, wherein the first laser (2) is a first DFB laser and the second laser (3) is a second DFB laser, the Bragg gratings of the first and the second DFB laser being configured in such a way that the wavelength of the radiation generated by the first DFB laser lies outside the stopband of the second DFB laser and the wavelength of the radiation generated by the second DFB laser lies outside the stopband of the first DFB laser. 

5. The Terahertz system as claimed in claim 4, wherein the first DFB laser is configured to generate radiation on the long wavelength side of its stop band and the second DFB laser is configured to generate radiation on the short wavelength side of its stop band. 

6. The Terahertz system as claimed in claim 4 or 5, wherein the first DFB laser comprises a gain coupled Bragg grating. 

7. The Terahertz system as claimed in one of the claims 4 to 6, wherein the second DFB laser comprises an index coupled Bragg grating. 

8. The Terahertz system as claimed in one of the claims 4 to 7, wherein - the first DFB laser comprises at least a first and a second section having a first and a second Bragg grating, wherein the Bragg wavelengths and the widths of the stop bands of the first and the second Bragg grating differ in such a way that only the wavelengths of the long wavelength modes in the first and the second section compare, and/or - the second DFB laser comprises at least a first and a second section having a first and a second Bragg grating, wherein the Bragg wavelengths and the widths of the stop bands of the first and the second Bragg grating differ in such a way that only the wavelengths of the short wavelength modes in the first and the second section compare. 

9. The Terahertz system as claimed in one of the preceding claims, wherein the first and/or the second laser (2, 3) comprises means for tuning the wavelength of the generated radiation. 

10. The Terahertz system as claimed in claims 8 and 9, wherein the means for tuning the wavelength are configured in such a way that - the Bragg wavelength of at least one of the first and the second Bragg grating of the first DFB laser can be altered such that the overlap of the long wavelength modes can be switched to an overlap of the short wavelength modes, and/or - the Bragg wavelength of at least one of the first and the second Bragg grating of the second laser can be altered such that the overlap of the short wavelength modes can be switched to an overlap of the long wavelength modes. 

11. The Terahertz system as claimed in claim 9 and 10, wherein the means for tuning the wavelength comprise - a first heating element assigned to the first section of the first DFB laser and a second heating element assigned to the second section of the first DFB laser such that the Bragg wavelength of the first and the second Bragg grating of the first DFB laser can be altered independently from one another; and/or - a first heating element assigned to the first section of the second DFB laser and a second heating element assigned to the second section of the second DFB laser such that the Bragg wavelength of the first and the second Bragg grating of the second DFB laser can be altered independently from one another. 

12. The Terahertz system as claimed in one of the preceding claims, further comprising a mode transforming device (51, 52) for transforming the spatial intensity distribution of the radiation generated by the first and/or the second laser (2, 3) into a modified spatial intensity distribution. 

13. The Terahertz system as claimed in one of the preceding claims, further comprising an amplifying device (71, 72) for amplifying the radiation generated by the first and/or the second laser (2, 3). 

14. Use of a beat signal generating device (1), wherein the beat signal generating device (1) comprises - a first laser (2) for generating radiation of a first wavelength (λ
1); - a second laser (3) for generating radiation of a second wavelength (λ2) different from the first wavelength (λ1); - a first and a second output port (11, 12); - a phase modulating unit (4) for modifying both the phase of radiation generated by the first laser (2) and the phase of radiation generated the second laser (3), wherein the beat signal generating device (1) is configured in such a way that - the radiation generated by the first laser (2) is transmitted through the second laser (3) and superposed with the radiation generated by the second laser (3) at the second output port (12), and - the radiation generated by the second laser (3) is transmitted through the first laser (2) and superposed with the radiation generated by the first laser (2) at the first output port (11), such that a first beat signal (A) will be emitted at the first output port (11) and a second beat signal (B) will be emitted at the second output (12) port, characterized in that
the beat signal generating device (1) is used to control a Terahertz system, wherein the first output port (11) of the beat signal generating device (1) is connected to a first component of the Terahertz system and the second output port (12) of the beat signal generating device (1) is connected to a second component of the Terahertz system, the first component being a Terahertz transmitter and the second component being a Terahertz receiver, wherein the first beat signal (A) is supplied to the Terahertz transmitter and the second beat signal (B) is supplied to the Terahertz receiver, and wherein the phase between the first and the second beat (A, B) signal is adjusted by means of the phase modulating unit (4). 

Wednesday, September 13, 2017

US Patent-Real-time detection and imaging of terahertz pulse radiation by using photoacoustic conversion


United States Patent 9759689
Inventor:
Guo, Lingjie Jay (Ann Arbor, MI, US) 


http://www.freepatentsonline.com/9759689.html

Methods and devices for high speed detection of terahertz radiation are provided. A photoacoustic transducer receives a pulse of terahertz (THz) radiation. The transducer may comprise a solid, liquid, or semi-solid material. For example, the transducer may be a composite material having a polymer and radiation absorbing particles. The photoacoustic transducer produces an acoustic wave (e.g., an ultrasound wave) in response to receiving the pulse of THz radiation. An acoustic sensor receives the acoustic wave produced by the photoacoustic transducer and thus provides detection of the THz wave.

Thursday, August 10, 2017

US Patent-Quantum cascade external cavity laser with metasurfaces


United States Patent 9728930
Inventors:
Williams, Benjamin Stanford (Los Angeles, CA, US) 
Xu, Luyao (Los Angeles, CA, US) 
Chen, Daguan (Los Angeles, CA, US)

http://www.freepatentsonline.com/9728930.html

A metasurface reflector for quantum cascade lasing is disclosed. The metasurface reflector uses an array of subcavities disposed on a substrate and spaced with a sub-wavelength period. Each of the subcavities includes a layer of quantum-cascade-laser-active material sandwiched between two metallic layers. The array of subcavities reflect an incident light of a resonant frequency with amplification. When used with an output coupler, a quantum cascade laser beam can be generated.

Thursday, July 13, 2017

US Patent-TELEMETRY SYSTEM WITH TERAHERTZ FREQUENCY MULTIPLIER


United States Patent Application 20170198568
Nitsche, Wolfgang Hartmut (Humble, TX, US) 
Maida, John L. (Houston, TX, US) 
Bhongale, Satyan Gopal (Cypress, TX, US)

http://www.freepatentsonline.com/y2017/0198568.html

An example telemetry system for downhole operations in a subterranean formation comprises an electromagnetic (EM) radiation source and an EM radiation detector. A waveguide may be coupled to the EM radiation source and the EM radiation detector. A frequency multiplier may be coupled to the waveguide and positioned within a borehole in the subterranean formation.

Wednesday, July 12, 2017

US Patent-Electric field control element for phonons



United States Patent 9705081
Scheibner, Michael (Merced, CA, US) 

http://www.freepatentsonline.com/9705081.html

Generally discussed herein are techniques for and systems and apparatuses configured to control phonons using an electric field. In one or more embodiments, an apparatus can include electrical contacts, two quantum dots embedded in a semiconductor such that when an electrical bias is applied to the electrical contacts, the electric field produced by the electrical bias is substantially parallel to an axis through the two quantum dots, and a phononic wave guide coupled to the semiconductor, the phononic wave guide configured to transport phonons therethrough...


The phonon control mechanism (e.g., phonon FET) can be used to control the flow of phonon heat so as to increase an efficiency in which heat is dissipated or increased or to more precisely direct a flow of heat. The phonon control mechanism can be used as an interface between photonic logic (light based, for example fiber optic), electronic logic (electron based logic), phononic logic (phonon based logic), or spintronics (spin based logic). The phonon control mechanism can be used in quantum information technologies (e.g., for revealing coherent coupling between quantum structures). The phonon control mechanism can be used as a logic element in an information system (e.g., a solid state based information system) or processing technology, such as by using the phonon control mechanism as a logic switch. The phonon control mechanism can reduce noise caused by a phonon and can be used in an application to exploit its noise reducing ability, such as in a sensor or detector technology (e.g., light or TeraHertz radiation detector). Yet another application of the phonon control mechanism is in the field of solar technology where a high light absorption and reduced thermal emmittance can be advantageous, such as can be provided by the phonon control mechanism. The phonon control mechanism can be used in a strain or motion sensor, 

Sunday, April 23, 2017

US Patent Application and Abstract-Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof


USPTO Applicaton #: #20170108756 
Inventors: Yongdan Huang, Hua Qin, Zhipeng Zhang, Yao Yu

http://www.freshpatents.com/-dt20170420ptan20170108756.php



A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

Wednesday, April 5, 2017

US Patent-Impedance adaptation in a THz detector


United States Patent 9614116
Inventors:
Le Bars, Philippe (Thorigne Fouillard, FR) 
Sahyoun, Walaa (Rennes, FR) 
Knap, Wojciech (Saint-Gely-du-Fesc, FR) 
Diakonova, Nina (Montpellier, FR) 
Coquillat, Dominique (Prades-le-Lez, FR) 


At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna.


Friday, March 31, 2017

US Patent-System for Launching a Signal Into a Dielectric Waveguide



United States Patent Application 20170093010
Inventors:
Herbsommer, Juan Alejandro (Allen, TX, US) 
Kramer, Bradley Allen (Plano, TX, US) 

http://www.freepatentsonline.com/y2017/0093010.html

A system is provided for transmitting sub-terahertz electro-magnetic radio frequency (RF) signals using a dielectric waveguide (DWG) having a dielectric core member surrounded by dielectric cladding. An RF transmitter is coupled to an antenna located on a first substrate, in which the antenna is adjacent an edge of the substrate. The first substrate is mounted on a second substrate. A conductive reflector plate is formed on the top surface of the second substrate. An end of the DWG is mounted on the second substrate over the reflector plate such that an exposed face of the core member at the end of the DWG is adjacent the antenna. The core member at the end of DWG forms an angle of inclination with the second substrate in which the angle is in a range of approximately 10-30 degrees.

Saturday, February 11, 2017

Abstract-Boeing : Patent Issued for Terahertz Material Evaluation and Characterization via Material Difference Frequency Generation (USPTO 9557263)


http://www.4-traders.com/BOEING-CO-4816/news/Boeing-Patent-Issued-for-Terahertz-Material-Evaluation-and-Characterization-via-Material-Differenc-23848925/

By a News Reporter-Staff News Editor at Journal of Engineering -- THE BOEING COMPANY (Chicago, IL) has been issued patent number 9557263, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventors are Hunt, Jeffrey H. (Thousand Oaks, CA); Belk, John H. (St. Louis, MO).
This patent was filed on October 22, 2014 and was published online on January 31, 2017.

From the background information supplied by the inventors, news correspondents obtained the following quote: "In non-linear optical, or wave mixing processes, outputs are produced at sum, difference or harmonic frequencies of the input(s). Second order non-linear optics, or three wave mixing involves combining two inputs to produce one output at one of the combined frequencies. The use of second order non-linear optical surface spectroscopy to examine physical properties of a material surface is known. However, practical constraints on such known methods have impeded progress on the material evaluation and characterization beneath the surface of a material under inspection.

"The Terahertz (hereinafter 'THz') range refers to electromagnetic waves with frequencies between 100 GHz and 10 THz, or wavelengths between 3 mm and 30 .mu.m, existing in the radiation spectrum between the microwave and infrared region. Terahertz waves are known to pass through a variety of amorphous and opaque substances. In addition, many biomolecules, proteins, explosives or narcotics also feature characteristic absorption lines, so-called spectral 'fingerprints', at frequencies between 0.3 and 3 THz. The two main advantages of THz radiation are thus the penetration of conventionally opaque materials on one hand, and a high chemical selectivity on the other hand. Terahertz imaging is therefore thought to be a non-destructive technique for interrogating dielectric (non-conducting) materials. The use of terahertz waves for non-destructive evaluation of materials enables inspection of multi-layered structures and can therefore identify abnormalities from foreign material inclusions (contamination), delamination, heat damage, etc.

"The spectroscopic frequency band of a 0.1 to 10 THz is not easily accessible. Electronic sources like Gunn or Schottky diodes with subsequent frequency multipliers, provide high output levels (mW range), up to some 100 GHz, yet become inefficient in the sub-millimeter range. Direct optical sources, like quantum cascade lasers, are usually limited to frequencies greater than 5 THz, even when operated at cryogenic temperatures.

"Optoelectronic THz generation is an expression for indirect methods, where near-infrared laser light illuminates a metal-semiconductor-metal structure, generating a photocurrent that becomes the source of a THz wave. Both pulsed and continuous-wave (CW) techniques have been realized, and both have their advantages and limitations. Pulsed THz radiation offers a higher bandwidth (typically from about 0.1 to about 10 THz) and permits very fast measurements (a spectrum can be acquired within milliseconds). On the other hand, the frequency resolution is limited to several GHz. Vice versa, a CW system features a somewhat lower bandwidth (typically from about 0.1 to about 2 THz) and requires longer measurement times (acquiring a spectrum takes several minutes), yet the frequency can be controlled with extreme precision (down to single MHz).

"Composite materials such as fiberglass, Kevlar and carbon fiber are increasingly being used as structural components in aircraft because of their high strength to weight ratios, improved performance, reduced corrosion, etc., compared with other known structural materials. However, composites can be weakened by various defects and stress during their life cycle. Further, routine maintenance of composites requires complicated inspection and repair techniques.

"Terahertz radiation offers a non-invasive, non-contract, non-ionizing method of assessing composite part condition. However, THz sources have generally been difficult to produce. While there has been recent development using quantum cascade lasers, such devices remain largely in the developmental stage, and are intrinsically low-power devices. This limits their application to selected industrial manufacturing environments that require ease of operation and speed of data acquisition. In addition, use of THz surface of a substrate surface using presently available technology would still lack the degree of surface specificity required for interrogating composite and other opaque surfaces.

"The use of composite materials in modern manufacturing scenarios requires the existence of diagnostics that can reliably interrogate surface and subsurface composite characteristics. Such interrogation developments were not required for interrogating previous metallic-based manufacturing, since such systems were developed based on several centuries of metal manufacturing experience. While x-ray technologies were adequate to perform subsurface measurements with metal substrates, concerns regarding health and safety of personnel have properly precluded their use and adaptation in all but the most carefully controlled environments, such as medical facilities."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "According to one aspect, the present disclosure is directed to methods, systems and apparatuses for evaluating and characterizing substrate material surfaces and sub-surfaces in the THz regime by using a plurality of optical source input radiation (non-THz regime sources). According to another aspect, the optical sources undergo second order mixing, specifically difference frequency generation (DFG). The present methods, systems and apparatuses require only optical sources, but achieve the effect of using THz regime radiation. The optical sources of inherent interest exist in abundance, can be operated for long-duration with reduced maintenance, have a comparatively easy set-up, and can be easily inspected.

"According to the methods, systems and apparatuses disclosed herein, it has now been demonstrated that THz regime investigation can be performed using only optical input sources that are in the optical regime. Desired effects in the THz regime are achieved via the use of non-linear optical interaction of optical source input beams at a material surface and/or sub-surface of a material being interrogated, by obtaining a difference frequency generation (DFG) between the two optical source inputs.

"According to a further aspect, one or more properties of the substrate surface are measured based on the output beam received by the detector. A first optical input beam from a first optical source having a first frequency, for example, in the optical range of from about 10,000 cm.sup.-1 to about 30,000 cm.sup.-1, is directed onto a predetermined region of a substrate material surface. A second optical input beam from a second optical source having a second frequency different from the first source frequency, but, for example, between from about 10,000 cm.sup.-1 to about 30,000 cm.sup.-1 is directed onto a predetermined region of a substrate material surface. While the frequency of the first optical source is largely arbitrary (but within the stated range), the frequency of the second optical source differs from the first optical source by the amount of the desired THz frequency to be generated. The first and second input beams are mixed at or beneath the surface of the substrate material surface to provide an output beam having a THz frequency of from about 0.1 THz to about 100 THz. The output beam is received by a terahertz detector. One or more properties of the substrate material surface are measured based on the output beam received by the THz detector.

"Therefore, according to one aspect, the present disclosure contemplates evaluating a substrate material surface comprising the steps of directing a first optical input beam from a first optical source having a first frequency onto a region of a substrate material surface; and directing a second optical input beam from a second optical source having a second frequency onto the region of the substrate material surface, with the first frequency of the first optical input beam differing from the second frequency of the second optical input beam. The first optical input beam and the second optical input beam are mixed at or beneath the substrate material surface to provide an output beam having a THz frequency. The output beam is directed to and received by a THz detector, and one or more properties of the substrate material surface are measured based on the output beam received by the detector.

"According to aspect of the present disclosure, the disclosed methods, systems and apparatuses can measure changes in a substrate material surface and subsurface, or properties and characteristics of any substrate material. For example, such characteristics include, mechanical defects, surface roughness, molecular contamination by non-native species, surface molecular orientation, etc. and combinations thereof. According to an aspect of the present disclosure, while the achievable absolute sensitivity depends on the particular parameters of the optical sources, and detectors selected (such as, for example, signal-to-noise ratio, etc.), the resulting signal changes in an output beam from as little as a tenth of a molecular monolayer at the material substrate surface will be detected.

"According to still further aspects, the difference between the first frequency of the first optical input beam and the second frequency of the second optical input beam is a THz frequency.

"In a further aspect, the first optical input beam and the second optical input beam are both emitted from a single emitting device, and the emitting device may be a laser, and, more particularly, the emitting device is not a THz frequency emitting source.

"According to still further aspects, the first optical input beam and the second optical input beam are emitted from differing emitting devices, and the emitting devices may be lasers, but neither optical input beam is emitted from a THz emitting source.

"According to a further aspect, the output beam is non-co-linear with the first optical input beam and/or second optical input beam.

"Still further, according to one aspect, the first optical input beam and the second optical input beam are directed onto the region of the substrate surface simultaneously or substantially simultaneously.

"According to another aspect, the present disclosure is directed to a system for characterizing a substrate surface. The system comprises one or more one optical emitting devices for emitting a first optical input beam having a first frequency and a second optical input beam having a second frequency and a THz detector, wherein the one or more optical emitting devices is positioned to direct the first optical input beam and the second optical input beam to a region of the substrate surface, wherein the first frequency of the first optical input beam differs from the second frequency of the second optical input beam, and wherein the THz detector is positioned to receive a THz output beam formed from a mixing of the first optical input beam and the second optical input beam at or beneath the substrate surface. The THz detector is in communication with computer software and/or hardware configured to measure one or more properties of the substrate material surface based on the THz output beam received by the detector.

"In a further aspect, the first optical input beam and the second optical input beam are both emitted from a single emitting device that is not a THz frequency emitting source. In another aspect, the single emitting device is a laser.

"In a still further aspect, the system comprises a plurality of optical emitting devices and the first optical input beam and the second optical input beam are emitted from differing emitting devices, and wherein neither the first optical input beam nor the second optical input beam is emitted from a THz emitting source.

"In a further aspect, the first optical input beam and the second optical input beam are each emitted from a laser.

"In another aspect, the output beam is non-co-linear with the first optical input beam and/or second optical input beam.

"In a still further aspect, the systems of the present disclosure further comprise computer software and/or hardware configured to measure one or more properties of the substrate surface based on the output beam received by the detector.

"According to another aspect of the systems of present disclosure, one or more optical emitting devices comprises one or more controls selected from a group comprising an optical input beam frequency control, an optical input beam intensity control, an optical input beam bandwidth control, and combinations thereof.

"In a further aspect, the systems of the present disclosure comprise emitting devices having one or more controls that produce a frequency difference between the first optical input beam and the second optical input beam that is a THz frequency.

"Still further aspects are directed to apparatuses comprising a system for characterizing a substrate surface. The apparatuses comprise one or more one optical emitting devices for emitting a first optical input beam having a first frequency and a second optical input beam having a second frequency and a THz detector, wherein the one or more optical emitting devices is positioned to direct the first optical input beam and the second optical input beam to a region of the substrate surface, wherein the first frequency of the first optical input beam differs from the second frequency of the second optical input beam, and wherein the THz detector is positioned to receive a THz output beam formed from a mixing of the first optical input beam and the second optical input beam at or beneath the substrate surface.

"In a still further aspect, the methods, systems and apparatuses of the present disclosure are directed to a vehicle comprising a substrate material surface, wherein at least a portion of the substrate material surface is interrogated by directing a first optical input beam from a first optical source having a first frequency onto a region of a substrate material surface. A second optical input beam from a second optical source having a second frequency is directed onto the region of the substrate material surface, with the first frequency of the first optical input beam differing from the second frequency of the second optical input beam. The first and second optical input beams are mixed at or beneath the substrate material surface to provide an output beam having a THz frequency. The output beam is directed to and received by a THz detector, and one or more properties of the substrate material surface are measured based on the output beam received by the detector.

"In a further aspect the vehicle includes, but is not limited to, manned or unmanned objects and structures in an atmospheric or space environment. Contemplated objects include vehicles, such as, for example, aircraft, satellites, rockets, missiles, etc., and therefor include manned and unmanned aircraft, spacecraft, terrestrial vehicles, non-terrestrial vehicles and even surface and sub-surface water-borne marine vehicles, objects and structures.

"For the purpose of this disclosure, the terms 'area', 'location' and 'region' are used interchangeably and have equivalent meaning when referring to the substrate material.

"For the purpose of this disclosure, the terms 'beam' and 'signal' may be used interchangeably and have equivalent meaning when referring to the substrate material.

"For the purpose of this disclosure, the terms 'interrogation' and 'characterization' are used interchangeably and have equivalent meaning when referring to the substrate material.

"The methods, systems and apparatuses of the present disclosure provide solutions to the problems of accurately and cost-effectively interrogating and evaluating substrate material surface and sub-surface characteristics including, but not limited to the interrogation and evaluation of chemical composition, homogeneity, heterogeneity, mechanical surface irregularities (including, but not limited to, defects and contamination), crystallographic defects, surface, etc., and combinations thereof."

Saturday, February 4, 2017

Rockwell Collins : Patent Issued for Terahertz Laser (USPTO 9551619)


http://www.4-traders.com/ROCKWELL-COLLINS-INC-16723/news/Rockwell-Collins-Patent-Issued-for-Terahertz-Laser-USPTO-9551619-23804823/

By a News Reporter-Staff News Editor at Investment Weekly News -- Rockwell Collins, Inc. (Cedar Rapids, IA) has been issued patent number 9551619, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventors are Brown, Robert G. (Tustin, CA); Stanley, James H. (Palo Alto, CA).

This patent was filed on September 23, 2011 and was published online on January 24, 2017.

From the background information supplied by the inventors, news correspondents obtained the following quote: "Lasers emitting in the THz frequency range of 0.1 to 10 THz are known. For example, U.S. Pat. Nos. 7,471,449, 7,508,578, 7,706,056, 7,430,074, and 7,440,178 to Korenblit and Tankhilevich describe magnon lasers which emit in the THz frequency range. In such magnon lasers, lasing is predicted to occur in a lasing medium of ferromagnetic semiconductor material involving spin-up and spin-down electrons in a classic 4 level sub-band laser structure [A E. Siegman, `Lasers`, University Science Books, 1986.]. The magnon lasing emission occurs for transitions between the upper two sub-band. Above a certain threshold, annihilating non-equilibrium magnons will lase and produce THz radiation, whose intensity depends on the magnon collision rate.

"Lasing is achieved by a balance between various length scales, the mean free path of electrons in the medium, the spin-wave wavelength, the sample dimensions, and the radiated wavelength. To lase, the ambient temperature must be below a critical temperature, where recent results have shown that with the right materials, the critical temperature may be as high as 850.degree. C. In a one hundred layer magnon laser incorporating semiconductor magnon mirrors, the CW (continuous wave) power can be increased 100-fold, and yet the device thickness may be less than 4 microns.

"Korenblit and Tankhilevich's own predictions for their CW magnon laser are for a threshold current exceeding 5000 Amps/cm.sup.2, and employing 10-100 Watts of input electrical power, where it might be possible to extract .about.10 mW of laser power for a single-stage laser and .about.1 Watt for a 100 stage laser. The required threshold current and input electrical power for output laser power exceeds other known solid-stage lasers for this wavelength range, where wavelengths should be in the 0.2 to 2.0 THz region, with a laser line width of .about.1 MHz.

"Moreover, currently most powerful THz emitters are relatively feeble. Cooled Quantum Cascade Lasers (QCL) lasers emit microWatts of power, with the best prospects being mW. The best research-level MMICs emit only 50 mW of power at 0.22 THz."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "According to one embodiment, there is provided a pulsed emitter of electromagnetic radiation having a frequency range of 0.1 to 10 THz, comprising: an electromagnetic radiation gain medium for generating electromagnetic radiation having the frequency range of 0.1 to 10 THz; and a pulse inducing element configured to induce an electromagnetic radiation pulse in the gain medium."

For the URL and additional information on this patent, see: Brown, Robert G.; Stanley, James H.. Terahertz Laser. U.S. Patent Number 9551619, filed September 23, 2011, and published online on January 24, 2017. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9551619.PN.&OS=PN/9551619RS=PN/9551619

Keywords for this news article include: Electronics, Electromagnet, Semiconductor, Rockwell Collins Inc.
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Wednesday, December 28, 2016

Patent application-US09525136) Ultraviolet, infrared and terahertz photo/radiation sensors using graphene layers to enhance sensitivity


Applicants:Magnolia Optical Technologies, Inc.
Inventors:Elwood J. Egerton
Ashok K. Sood
Agents:Loginov & Associates, PLLC
William A. Loginov

Application Number:14580198Application Date:22.12.2014
Publication Number:09525136Publication Date:20.12.2016
Grant Number:09525136Grant Date:20.12.2016
Publication Kind :B1
https://patentscope.wipo.int/search/en/detail.jsf?docId=US189679256&recNum=220&docAn=14580198&queryString=&maxRec=57920012

Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.

Friday, December 9, 2016

United States Patent 9512863-Silicon alignment pins: an easy way to realize a wafer-to-wafer alignment


United States Patent 9512863
Inventors:
Jung-kubiak, Cecile (Pasadena, CA, US) 
Reck, Theodore (Pasadena, CA, US) 
Thomas, Bertrand (Bonn, DE) 
Lin, Robert H. (Chino, CA, US) 
Peralta, Alejandro (Huntington Beach, CA, US) 
Gill, John J. (La Crescenta, CA, US) 
Lee, Choonsup (La Palma, CA, US) 
Siles, Jose V. (Pasadena, CA, US) 
Toda, Risaku (Glendale, CA, US) 
Chattopadhyay, Goutam (Pasadena, CA, US) 
Cooper, Ken B. (Glendale, CA, US) 
Mehdi, Imran (South Pasadena, CA, US)

http://www.freepatentsonline.com/9512863.html 

A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Saturday, December 3, 2016

United States Patent Application 20160351489-SUB-TERAHERTZ/TERAHERTZ INTERCONNECT


United States Patent Application 20160351489
Gu, Qun (Davis, CA, US) 
Liu, Xiaoguang (Davis, CA, US) 
Luhmann Jr., Neville C. (Walnut Creek, CA, US) 
Yu, Bo (Davis, CA, US)

http://www.freepatentsonline.com/y2016/0351489.html

An interconnect is described that comprises an interconnect channel, and two channel couplers coupled to the two ends of the interconnect channel through respective stoppers that provide a gap between the channel couplers and the interconnect channel. Each channel coupler can comprise a coplanar waveguide, a microstrip line, and a patch-antenna based coupler. The interconnect can enable communication between integrated circuits using signal waves having a frequency between 100 GHz and 3 THz.