DOTFIVE completes it's work and announces it's results

 The project is finished since July 2011.

 http://www.dotfive.eu/

Results

DOTFIVE is a three-year IP proposal for a very ambitious project focused on advanced RTD activities necessary to move the Silicon/germanium heterojunction bipolar transistor (HBT) into the operating frequency range of 0.5 terahertz (THz) (500 gigahertz GHz) enabling the future development of  communication, imaging or radar  Integrated Circuits (IC) working at frequencies up to 160 GHz. For a given lithography node bipolar transistors and more recently HBT have always led the frequency race compared to MOS devices, while offering higher power density and better analogue performances (transconductance, noise, transistor matching).The main objective of this highly qualified consortium is to establish a leadership position for the European semiconductor industry in the area of millimeter wave (mmW) by research and development work on silicon-germanium (SiGe) based transistor devices and circuit design capabilities and know-how. SiGe HBT is a key reliable device for applications requiring power > few mW (future MOS limitation) and enabling high density, low cost integration compared to III-V.DOTFIVE vision can be summarised as follows:The overall grand goal of DOTFIVE is to offer silicon based cost effective technologies for the integration of complete electronic functions in the millimeter wavelength (1mm-10mm) range (or 30GHz-300GHz). To achieve the mid range circuit operating frequency Fc ~150GHz we need at least transistors with Fmax~= 3 Fc  ie: ~500GHz or .5THz at RT. In 2007 at time of proposal the world-class SiGe Heterojunction Bipolar Transistor technologies offered were in the ~250 GHz range. To DOUBLE the HBT performance in 3 years (faster than ITRS roadmap) the consortium had to assemble a consortium capable of:
a) Theory, modelization, characterization capability
b) SiGe HBT processing capability
c) mmW circuit design capability With these objectives in mind, the consortium thrived to work somewhat like a VIRTUAL LAB «mmW EUROLAB » for a period of 42 months.Objectives and key results by period:


 Year 1 Measurable Objectives year 200820092010 targets fmax / td = 300GHz / 3.5ps
400 GHz model libraryfmax / td = 400GHz / 3 ps
500 GHz model library
fmax / td = 500GHz / 2.5ps

 The pressure to define a quantifiable Figure of Merit (FoM) push the consortium to adopt 2 FoM, (Fmax and td).Thus the consotium took the goal to set a common FoM methodology.After year 1 a common set of methodology was accepted across the consortium (test pattern, extraction technique, measurement strategy, models etc…) AND in 2008 all 4 technology providers reached or exceeded Fmax 300GHZ.

Year 2“Measurable Objectives” defined; implementation based on learning cycle from Y1:2009: target fmax / td = 400GHz / 3 ps    500 GHz (td is the CML RingOscillator delay time)
Based on accepted methodology within the consortium (test pattern, extraction technique, measurement strategy, models etc…)  in 2009  3 technology providers reached or exceeded Fmax 400GHz with IMEC demonstrating G1G architecture & IHP its 2nd generation HBT At the end of Year 2, review the situation could be summarized on table below:

Then project continued in Year 3 and for the 6 months extension granted by the European Commission.

Year 3 (+ 6 months extension)“Measurable Objectives” defined; implementation based on learning cycle Y2
1 2010: target fmax / td = 500GHz / 2.5ps (td is the CML RingOscillator delay time)During P3 DOTFIVE Consortium delivered OUTSTANDING RESULTS. In WP2 the DPSA-SEG HBT architecture pretty much ran out of steam. The key issue is the extrinsic base resistance. BUT WP3 had 3 novel architectures to propose thanks to continuous effort through the extra semester of 2011. Consortium knew upfront that 500 GHz was a challenging goal. P3 is the time when we saw the benefit of the “split technology approach” where WP2 is concentrated on the evolutionary technology concept and WP3 on the disruptive technology concept. WP3 is showing the direction where the future of SiGe HBTs is
WP2 & 3 provided outstanding opportunity to design activity of WP5 to shine with many world firsts in term of circuit design.In WP1/4: In 2009 consortium evidenced shortcomings to the HiCUM model prompting a quick fix, the so-called “reverse Early effect” was transformed into a physics based model and deployed by CAD vendors worldwide.  Low temperature (1.6°K) electrical characterization yielded insights where HBT improvements are required. The Ultimate SiGe HBT limit study (Ft ~1.2 THz) was a impressive collaborative effort.In WP5: Several world firsts in term of performances of circuit blocks. Above-fmax SiGe circuits (multipliers, harmonic mixers) show a viable path for true silicon terahertz applications. 140GHz automotive radar was demonstrated.
Faster circuits still needed to improve sensitivity and output power.
Although global project objectives are REACHED, the projected TIMELINE HAS SLIPPED due essentially to slower technology learning cycle in WP2 but the will to complete the 3 predefined learning cycles prevailed.
WP1 & 4 partners have behaved like a European Advanced TCAD/model infrastructure capable to lead at world level. The P3 main achievements are:
The 4 technology providers (2 industrialists/2 institutes) made OUTSTANDING PROGRESS towards the main objective:From the previous table we obtain the final results summarized in the table below :

With 64 deliverables, 44 milestones and 76 publications in open literature (journals and conferences) DOTFIVE was very productive. 1 patent was awarded and a second one is pending 2 best paper awards were attributed to DOTFIVE publications

DOTFIVE-results.pdf

Focus on DotFive

http://www.dotfive.eu/index.php?id=18

The concept of the DOTFIVE project stems from the competitive race existing in semiconductor research to achieve individual devices and integrated circuits with higher operating speed allowing realization of new applications in new regions of the electromagnetic spectrum.

Applications in the emerging high-frequency (h.f.) markets more and more use SiGe components for cost reasons. Current state-of-the-art research and development is taking place primarily in data communication and radar systems at 24, 60, and 77 GHz [Floy06, Kata07, Haji05]. For instance, IBM has just demonstrated that its state-of-the-art SiGe HBT technology has the potential to play a major role in high-volume consumer electronic markets by proving the feasibility of 2-Gbps uncompressed HDTV transmission over a 60-GHz SiGe HBT radio link [Kata07, Pfei06a, Floy06].

The main objective of the DOTFIVE project is to demonstrate the realization of SiGe Heterojunction Bipolar Transistors (HBTs) operating at a maximum frequency close to 0.5 THz (500 GHz) at room temperature, and evaluate the achievable performance of integrated mmWave circuits using those HBTs. Further important objectives are: 0 To identify the most important effects and to incorporate an adequate description in a compact model. To develop new parameter extraction methods and to provide a unified set of test structures. To provide clear guidelines on high-frequency characterization, de-embedding methods and test pad design.

0

The main drawbacks in existing designs, which operate typically at frequencies up to a third of the transit frequency fT, are the necessary high bias currents leading to a power dissipation of several watts per radar chip and a limited achievable noise figure (NF) in each building block. The former disadvantage results in additional cooling effort, which implies costly packaging and mounting procedures. The latter directly influences the overall performance, as the total signal-to-noise ratio (SNR) in homodyne systems is directly limited by the NF of the (active) mixer. Thus, technologies with higher fT can directly lead to improved automotive radar systems with higher performance at lower power consumption, which increases road safety and energy budget. With an increased fT completely new and highly integrated microwave sensor systems are feasible.

However, until recently, this spectral region has resisted attempts to broadly harness its potential for everyday applications. This led to the expression THz gap, loosely describing the lack of adequate technologies to effectively bridge this transition region between microwaves and optics, both readily accessible via well developed electronic and laser-based approaches. THz technology is an emerging field which has demonstrated a wide-ranging potential. Extensive research in the last years has identified many attractive application areas and has paved the technological path towards broadly usable THz systems. THz technology is currently in a pivotal phase and will soon be in a position to radically expand our analytic capabilities via its intrinsic benefits. In this context, DOTFIVE is planned to establish the basis for fully integrated cost efficient electronic THz solutions.

                           Figure 1: Illustration of some exemplary applications of Terahertz radiation.
P. de Maagt, P. Haring Bolivar and C. Mann, Terahertz science, engineering and systems-from space to earth applications, Encyclopedia of RF and Microwave Engineering, Ed. by K. Chang, pp. 5175-5194 (John Wiley & Sons, Inc., 2005) ISBN 0-471-27053-

The scientific aspects of the DOTFIVE project are tackled by the work packages (WPs) 1 to 5 during a period of 36 months.

0

WP1 is dedicated to “TCAD & physics-based predictive modeling” using Technology Computer Aided Design (TCAD) tools, which allow the simulation of processing steps and electrical characteristics of devices.
WP1 will support continuously the technology development in WP2 and WP3 by, e.g., assessing the achievable performance limits, identifying the critical limitations, and exploring new device concepts and architectures. WP1 will investigate the ultimate limits of SiGe HBT technology in terms of device performance, transport limits, quantum effects, and safe operation area limitations.
Partners involved: UN, ST SA, IMEC, IMS, BU, GWT

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WP2 is dedicated to “evolutionary SiGe HBT technology”. The work in WP2 will be based on state-of-the-art double-polysilicon self-aligned HBT architecture with selectively deposited SiGeC base. The objective of WP2 is to improve the performance of this technology towards the demanding DOTFIVE targets, such as 500 GHz maximum oscillation frequency and 2.5 ps gate delay.
Partners involved:ST SA, ST SAS, IFX

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WP3 is dedicated to “advanced and novel SiGe HBT process modules and architectures”. Next to the evolutionary scaling of self-aligned selective epitaxial base HBTs in WP2, advanced and possibly revolutionary process modules are further developed and characterized in WP3. Focus is on the development of device architectures that have shown promising initial results.
Partners involved:IMEC, IHP

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WP4 is dedicated to “compact modeling and device characterization”. This work package is in charge of setting up the methodology to accurately characterize transistors and to provide models that are valid and usable for circuit design all the way to 500 GHz.
Partners involved:ST SA, IFX, TUD, UN, UPS, XMOD, GWT

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WP5 is dedicated to “application and technology benchmarking”. The objective of the work package is to direct the advanced process development and modeling (WP1,2,3) towards the next-generation of mmWave and THz applications through benchmarking and verifiable prototyping.
Partners involved:IFX, IMS, UoS, JKU, UoW

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WP6 is dedicated to the training and dissemination of the DOTFIVE results.
Partners involved:IMEC, ALMA, IFX, IHP, IMS, XMOD

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WP7 is dedicated to the management of the project
Partners involved:ST SA, ALMA

European researchers drive semiconductor technology for enhanced Terahertz imaging

http://cordis.europa.eu/fetch?CALLER=EN_NEWS_FP7&ACTION=D&DOC=1&CAT=NEWS&QUERY=01338e474e9a:9749:246581ed&RCN=34016Europeans continue to rise to the challenge of advancing communication, imaging and radar integrated circuits (IC) to work at high frequencies. A case in point is a team at Interuniversitair Micro-Electronica Centrum Vzw (imec) in Belgium; they recently presented the device 'fT/fMAX 245/450 GHz SiGe:C heterojunction bipolar transistor (HBT)'. This sophisticated device will help facilitate future high-volume millimetre-wave low-power circuits to be used in automotive radar applications. The study was funded in part by the DOTFIVE ('Towards 0.5 terahertz silicon/germanium hetero-junction bipolar technology') project, which received EUR 9.7 million under the 'Information and communication technologies' Theme of the EU's Seventh Framework Programme (FP7).

HBT devices are instrumental in helping silicon-based millimetre-wave circuits penetrate what is known as the terahertz (THz) gap. They enable enhanced imaging systems for security, medical and scientific applications, according to the researchers.

The team says the HBT devices are very fast and have a fully self-aligned architecture: self-alignment of the emitter, base and collector region. They can implement an optimised collector doping profile, they add. Where SiGe:C HBTs differ, in comparison with III-V-HBT devices, is that they combine high-density and low-cost integration. On account of this, they are better suited to consumer applications.

The researchers say these types of high-speed devices can also open up new application areas. They can work at very high frequencies with lower power dissipation, or with applications that require a reduced impact of process, and voltage and temperature variations at lower frequencies for better circuit reliability, the imec group said in a statement.

In order to secure the ultra-high speed requirements, sophisticated SiGe:C HBTs require additional upscaling of the device performance. For the most part, thin sub-collector doping profiles are considered a must for this upscaling. The collector dopants are typically introduced at the start of the processing and are therefore exposed to the complete thermal budget of the process flow. Because of this, the accurate positioning of the buried collector is harder to obtain.

In their statement, the imec researchers pointed out that performing in situ arsenic doping during the simultaneous growth of the sub-collector pedestal and the SiGe:C base allowed them to introduce both a thin, well-controlled, lowly doped collector region close to the base and a sharp transition to the highly doped collector, without further complicating the process.

This led to a significant increase in the overall HBT device performance: peak fMAX values above 450 GHz are obtained on devices with a high early voltage, a BVCEO of 1.7 V and a sharp transition from the saturation to the active region in the IC-VCE output curve. According to the researchers, the collector-base capacitance values did not rise much even though they performed aggressive scaling of the sub-collector doping profile. They said the current gain is well defined, with an average around 400; the emitter-base tunnel current, visible at low VBE values, is limited as well.

The DOTFIVE project, which is headed by the STMicroelectronics SA group of France, brought together researchers and industry players from Belgium, Germany, France and Italy.

For more information, please visit:

imec:
http://www2.imec.be/be_en/home.html

DOTFIVE:
http://www.dotfive.eu/

DOTFIVE predicts automotive radar and WLAN applications for Terahertz

DOTFIVE is aiming to establish a leadership position for the European semiconductor industry in the area of SiGe HBTs (Silicon-Germanium Heterojunction Bipolar Transistors) for millimeter wave applications, where semiconductor manufacturers like STMicroelectronics and Infineon Technologies are involved.

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Emerging high-volume millimeter wave applications encompass, for example, 77 GHz automotive radar applications and 60 GHz WLAN (Wireless Local Area Network) communication systems. According to U.S.market research company Strategy Analysts, the market for long-range anti-collision warning systems in cars could increase by more than 65 percent per year until 2011. In addition to these already evolving markets, DOTFIVE technology sets out to be a key enabler for silicon-based millimeter wave circuits penetrating the so-called THz gap, enabling enhanced imaging systems with applications in the security, medical and scientific area.

See the results for each WP : http://www.dotfive.eu/index.php?id=69

The European Union's DotFive project sets record and aims to reduce cost of Terahertz devices

Image via Wikipedia

http://www.eetimes.com/electronics-news/4213481/Consortium-claims-SiGe-frequency-record

Consortium claims SiGe frequency record

R. Colin Johnson

2/24/2011 9:31 AM EST

PORTLAND, Ore. –The European Union's DotFive project has produced a silicon germanium chip set that it claims has the world's highest frequency of operation in the history silicon germanium (SiGe) history. The 820 GHz (0.82 terahertz) transmitter and receiver chip pair enable x-ray-like vision—to see inside containers—but at harmless millimeter wavelengths.

Today's terahertz imaging, radar and communications applications require expensive exotic devices, but the EU's DotFive project aims to lower the cost of terahertz devices by casting them in high-frequency SiGe. The three-year-old project is focused on producing millimeter wavelength silicon-germanium hetero-junction bipolar transistors (BiCMOS), which will be produced by commercially by STMicroelectronics NV and Infineon Technologies AG. 

At the International Solid-State Circuits Conference, IHP GmbH and the University of Wuppertal presented the latest results of the DotFive project. The team described its two chip set—transmitter and receiver—which includes all the frequency multipliers, harmonic mixers, power amplifiers, on-chip antennas, and other circuits needed to create 820 GHz frequencies from a 18GHz reference. The researchers demonstrated the chips in a THz imaging application that could see inside a USB memory stick.

Visual images (top) and x-ray-like terahertz images (below) of objects screened at 0.82 THz with an integrated SiGe solution. Source: DotFive

The DotFive project is led by STMicro (Geneva), Infineon (Munich, Germany), XMOD Technologies (Talence, France), GWT-TUD GmbH (Dresden, Germany) along with research institutes IMEC (Leuven, Belgium) and IHP (Germany) and academic partners at the Johannes Kepler University of Linz (Austria), the Bordeaux National School of Electronics, IT and Radiocommunications, the Paris-Sud University (France), the Technical University of Dresden, the Bundeswehr University in Munich, the University of Siegen (Germany) and the University of Naples (Italy).

Chip micrographs of a fully-integrated SiGe chip-set for THz imaging applications, to be presented at the 2011 ISSCC. Source: DotFive