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Wednesday, April 5, 2017
US Patent-Impedance adaptation in a THz detector
United States Patent 9614116 Inventors:
Le Bars, Philippe (Thorigne Fouillard, FR) Sahyoun, Walaa (Rennes, FR) Knap, Wojciech (Saint-Gely-du-Fesc, FR) Diakonova, Nina (Montpellier, FR) Coquillat, Dominique (Prades-le-Lez, FR)
least one electronic device, system and method of manufacturing an
electromagnetic wave detector are provided herein. The electronic device for
receiving at least one electromagnetic wave of a given frequency may comprise
at least one first field effect transistor, and at least one antenna configured
to receive the at least one electromagnetic wave and connected to a gate of the
at least one first field effect transistor, wherein a length of the gate is in
a same order of magnitude as an oscillation length of an oscillation regime of
the at least one first field effect transistor at the given frequency, and a
width of the gate is such that an impedance presented by the at least one first
field effect transistor in the oscillation regime is adapted to an impedance of
the at least one antenna.