Showing posts with label Taiichi Otsuji. Show all posts
Showing posts with label Taiichi Otsuji. Show all posts

Friday, July 10, 2020

Abstract-Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures


We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.

Abstract-Room-Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures


Stephane Boubanga-Tombet, Wojciech Knap, Deepika Yadav, Akira Satou, Dmytro B. But, Vyacheslav V. Popov, Ilya V. Gorbenko, Valentin Kachorovskii, and Taiichi Otsuji


We study terahertz (THz) radiation transmission through grating-gate graphene-based nanostructures. We report on room-temperature THz radiation amplification stimulated by current-driven plasmon excitation. Specifically, with an increase of the dc current under periodic charge density modulation, we observe a strong redshift of the resonant THz plasmon absorption, followed by a window of complete transparency to incoming radiation and subsequent amplification and blueshift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. Additionally, we present a simple model offering a phenomenological description of the observed THz amplification. This model shows that in the presence of a dc current the radiation-induced correction to dissipation is sensitive to the phase shift between oscillations of carrier density and drift velocity. And, with an increasing current, the dissipation becomes negative, leading to amplification. The experimental results of this work, as all obtained at room-temperature, pave the way toward the new 2D plasmon-based, voltage-tunable THz radiation amplifiers.
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Thursday, May 28, 2020

Abstract-Room temperature amplification of terahertz radiation by grating-gate graphene structures



Stephane Boubanga-Tombet, Wojciech Knap, Deepika Yadav, Akira Satou, Dmytro B. But, Vyacheslav V. Popov, Ilya V. Gorbenko, Valentin Kachorovskii, and Taiichi Otsuji

https://journals.aps.org/prx/accepted/52079K1dC0014a02342729a68f281fe27fbfc8908

We study terahertz (THz) radiation transmission through grating-gate graphene based nanostructures. We report on room temperature THz radiation amplification stimulated by current-driven plasmon excitation. Specifically, with increase of the dc current under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, followed by a window of complete transparency to incoming radiation, and subsequent amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. Additionally, we present a simple model offering phenomenological description of the observed THz amplification. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between oscillations of carrier density and drift velocity. And with increasing current, the dissipation becomes negative, leading to amplification. The experimental results of this work, as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.

Monday, March 30, 2020

Abstract-Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures



We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers

Thursday, December 19, 2019

Abstract-Frequency-agile injection-seeded terahertz-wave parametric generation



Yoshikiyo Moriguchi, Yu Tokizane, Yuma Takida, Kouji Nawata, Shigenori Nagano, Manabu Sato, Taiichi Otsuji, and Hiroaki Minamide

https://www.osapublishing.org/ol/abstract.cfm?uri=ol-45-1-77

An injection-seeded terahertz (THz)-wave parametric generator (is-TPG) enables access to low-frequency fingerprints of molecules in the THz frequency region. However, its conventional scan repetition rate (SRR) is limited below 1 Hz. Thus, in this Letter, we propose an electrically controlled tuning system for the is-TPG, which provides high-speed scanning and random hopping agility. We achieved rapid THz frequency scanning on a pulse-by-pulse basis by employing a gain-switched laser diode and a micro-electromechanical system tunable vertical-cavity surface-emitting laser as the pump and seed lasers. A THz spectrum was acquired with a 10 times higher SRR of 10 Hz for the 1.6–3 THz range with a sampling resolution of 4.6 GHz.
© 2019 Optical Society of America

Wednesday, February 13, 2019

Abstract-Negative terahertz conductivity at vertical carrier injection in a black-Arsenic-Phosphorus-Graphene heterostructure integrated with a light-emitting diode



We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As1xPxL) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As1xPxL-GL-LED heterostructure can serve as an active part of the terahertz (THz) laser using the interband radiative transitions in the GL. The feasibility of the proposed concept is enabled by the combination of relatively narrow energy gap in the b-As1xPxL and the proper band alignment with the GL. The operation of the device in question is associated with the generation of the electron-hole pairs by the LED emitted near-infrared radiation in the b-As1xPxL, cooling of the photogenerated electrons and holes in this layer, and their injection into the GL. Since the minimum b-As1xPL energy gap is smaller than the energy of optical phonons in the GL, , the injection into the GL can lead to a relatively weak heating of the two-dimensional electron-hole plasma (2D-EHP) in the GL. At the temperatures somewhat lower than the room temperature, the injection can cool the 2D-EHP. This is beneficial for the interband population inversion in the GL, reinforcement of its negative dynamic conductivity, %in the THz range and the realization of the optical and plasmonic modes lasing supporting the new types of the THz radiation sources.

Wednesday, January 23, 2019

Abstract-Negative and positive terahertz and infrared photoconductivity in uncooled graphene



Victor Ryzhii, Dmitry S. Ponomarev, Maxim Ryzhii, Vladimir Mitin, Michael S. Shur, and Taiichi Otsuji

Fig. 1 Upper panel: the normalized carrier temperature variation (T − T0)/T0 (dashed lines) for different values of the parameter b (upper panel) and τ0 = 1 ps and the quasi-Fermi energy μ/T (solid line) for b = 0.1 and τ0 = 1 ps. Lower panel: the normalized carrier temperature variation (T − T0)/T0 (dashed line) for b = 0.1 and τ0 = 1 ps and the quasi-Fermi energy μ/T (solid lines) for b = 1 and different τ0.


https://www.osapublishing.org/ome/abstract.cfm?uri=ome-9-2-585

We develop the model for the terahertz (THz) and infrared (IR) photoconductivity of graphene layers (GLs) at room temperature. The model accounts for the linear GL energy spectrum and the features of the energy relaxation and generation-recombination mechanisms inherent at room temperature, namely, the optical phonon absorption and emission and the Auger interband processes. Using the developed model, we calculate the spectral dependences of the THz and IR photoconductivity of the GLs. We show that the GL photoconductivity can change sign depending on the photon frequency, the GL doping and the dominant mechanism of the carrier momentum relaxation. We also evaluate the responsivity of the THz and IR photodetectors using the GL photoconductivity. The obtained results along with the relevant experimental data might reveal the microscopic processes in GLs, and the developed model could be used for the optimization of the GL-based photodetectors.
© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Sunday, November 4, 2018

Abstract-Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures


Victor Ryzhii, Taiichi Otsuji, Maxim Ryzhii, Dmitry Sergeevich Ponomarev, Valerij Karasik, Vladimir Leiman, Vladimir Mitin,  Michael Shur,

http://iopscience.iop.org/article/10.1088/1361-6641/aae9b2

We analyze the electrical modulation of the terahertz (THz) radiation associated with the carrier heating in the graphene-phosphorene (GP) heterostuctures. The heating of the carriers leads to the transfer of a significant fraction 
 of the light carriers in the G-layer to the P-layer with a relatively large carrier effective mass.
 This might result in a dramatic decrease in the conductivity of the GP-channel
 that could be used to modulate
 the incident THz radiation. We demonstrate that the depth of the THz radiation modulation can be large in relatively wide range of the modulation frequencies.

Tuesday, August 14, 2018

Abstract-Terahertz-wave generation using graphene: Toward new types of terahertz lasers


Taiichi Otsuji, Stephane Boubanga Tombet, Akira Satou, Maxim Ryzhii, Victor Ryzhii

https://ieeexplore.ieee.org/document/6516886/

This paper reviews recent advances in terahertz-wave generation in graphene toward the creation of new types of terahertz lasers. First, fundamental basis of the optoelectronic properties of graphene is introduced. Second, nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene are described to introduce a possibility of negative dynamic conductivity in a wide terahertz range. Third, recent theoretical advances toward the creation of current-injection graphene terahertz lasers are described. Fourth, unique terahertz dynamics of the 2-D plasmons in graphene are described. Finally, the advantages of graphene materials and devices for terahertz-wave generation are summarized.

Sunday, December 10, 2017

Abstract-Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers



Victor Ryzhii, Maxim Ryzhii, Dmitry Svintsov, Vladimir Leiman, Vladimir Mitin, Michael S. Shur, and Taiichi Otsuji

https://www.osapublishing.org/oe/abstract.cfm?uri=oe-25-5-5536&origin=search

We report on the device model for the infrared photodetectors based on the van der Waals (vdW) heterostructures with the radiation absorbing graphene layers (GLs). These devices rely on the electron interband photoexcitation from the valence band of the GLs to the continuum states in the conduction band of the inter-GL barrier layers. We calculate the photocurrent and the GL infrared photodetector (GLIP) responsivity at weak and strong intensities of the incident radiation and conclude that the GLIPs can surpass or compete with the existing infrared and terahertz photodetectors. The obtained results can be useful for the GLIP design and optimization.
© 2017 Optical Society of America

Monday, August 14, 2017

Abstract-Terahertz LED based on current injection dual-gate graphene-channel field effect transistors



 Deepika Yadav, Youssef Tobah,  Kenta Sugawara,  Junki Mitsushio,   Gen Tamamushi,  Takayuki Watanabe, Alexander A. Dubinov,  Maxim Ryzhii,  Victor Ryzhii,  Taiichi Otsuji

http://ieeexplore.ieee.org/document/7999519/

Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.

Monday, May 15, 2017

Abstract-Broadband Terahertz-Light Emission by Current-Injection Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor


Deepika Yadav, Youssef Tobah, Gen Tamamushi, Junki Mitsushio, Takayuki Watanabe, Alexander Dubinov, Maxim Ryzhii, Victor Ryzhii, and Taiichi Otsuji

https://www.osapublishing.org/abstract.cfm?uri=CLEO_AT-2017-AM2B.7

Observed spontaneous THz emission(1-7.6THz) at 100K by current injection in distributed-feedback dual-gate graphene transistor. We saw nonlinear threshold-like behavior w.r.t the current-injection level. Precise DFB cavity design is expected to transcend spontaneous emission to stimulated emission.
© 2017 OSA

Wednesday, December 7, 2016

Abstract-Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure


The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed terahertz injection laser based on resonant radiative transitions between tunnel-coupled grapheme layers. We find an optimal number of active graphene layer pairs corresponding to the maximum net modal gain. The maximum gain increases with frequency and can be as large as ~ 500 cm-1 at 8 THz, while the threshold length of laser resonator can be as small as ~ 50 mkm. Our findings substantiate the possibility of ultra-compact voltage-tunable graphene-based lasers operating at room temperature.