Sunday, April 23, 2017

US Patent Application and Abstract-Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof

USPTO Applicaton #: #20170108756 
Inventors: Yongdan HuangHua QinZhipeng ZhangYao Yu

A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

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