USPTO Applicaton #: #20170108756
Inventors: Yongdan Huang, Hua Qin, Zhipeng Zhang, Yao Yu
http://www.freshpatents.com/-dt20170420ptan20170108756.php
A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.
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