Showing posts with label Jing Wu. Show all posts
Showing posts with label Jing Wu. Show all posts

Saturday, April 13, 2019

Abstract-Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector



Caiyang Wu, Wei Zhou, Niangjuan Yao, Xinyue Xu, Yue Qu, Zhibo Zhang, Jing Wu, Lin Jiang, Zhiming Huang, Junhao Chu

https://iopscience.iop.org/article/10.7567/1882-0786/ab14fc

We demonstrated a Si-based photoelectric detector with silicon-on-insulator material. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a responsivity of 49.3 kV/W and NEP of 0.38 pW/√Hz at 20-40 GHz, and achieved a responsivity of 3.3 kV/W and NEP of 5.7 pW/√Hz at 0.165-0.173 THz; Moreover, a short response time backsim810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.

Wednesday, January 6, 2016

Abstract-Terahertz Detection: Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection



http://onlinelibrary.wiley.com/doi/10.1002/adma.201670005/full

Terahertz (THz) is the gap between infrared and microwave frequencies. THz detection is still a formidable challenge even though no suitable theory has been built until now, although considerable mechanisms have been proposed. On page 112, Z. Huang and co-workers propose a unique theory to realize an excellent photoelectric effect and experimentally demonstrate its extreme sensitivity to room-temperature THz detection.

Friday, November 6, 2015

Abstract-Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection





http://onlinelibrary.wiley.com/doi/10.1002/adma.201503350/full

Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor using a wrapped metal–semiconductor–metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.