An electrically‐tunable polarization converter with a dynamic range of 2.026 to 2.481 THz is designed and simulated in this work. A dumbbell‐like Dirac semimetal metamaterial is fabricated and attached to a Teflon plate, with a perfect electric conductor as the substrate. Simulation results show that for a 22‐μm‐thick Teflon plate and a Fermi level is 60 meV, the polarization conversion rate reaches 100% at the two resonance frequencies of 2.072 and 2.428 THz. Moreover, the polarization conversion rate exceeds 85% in the frequency range of 2.026 to 2.481 THz.
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Showing posts with label Wei Zhou. Show all posts
Showing posts with label Wei Zhou. Show all posts
Sunday, January 12, 2020
Abstract-Dynamically tunable high‐efficiency broadband terahertz linear polarization converter based on Dirac semimetal metamaterials
An electrically‐tunable polarization converter with a dynamic range of 2.026 to 2.481 THz is designed and simulated in this work. A dumbbell‐like Dirac semimetal metamaterial is fabricated and attached to a Teflon plate, with a perfect electric conductor as the substrate. Simulation results show that for a 22‐μm‐thick Teflon plate and a Fermi level is 60 meV, the polarization conversion rate reaches 100% at the two resonance frequencies of 2.072 and 2.428 THz. Moreover, the polarization conversion rate exceeds 85% in the frequency range of 2.026 to 2.481 THz.
Saturday, April 13, 2019
Abstract-Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector
Applied Physics Express
Caiyang Wu, Wei Zhou, Niangjuan Yao, Xinyue Xu, Yue Qu, Zhibo Zhang, Jing Wu, Lin Jiang, Zhiming Huang, Junhao Chu
https://iopscience.iop.org/article/10.7567/1882-0786/ab14fc
We demonstrated a Si-based photoelectric detector with silicon-on-insulator material. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a responsivity of 49.3 kV/W and NEP of 0.38 pW/√Hz at 20-40 GHz, and achieved a responsivity of 3.3 kV/W and NEP of 5.7 pW/√Hz at 0.165-0.173 THz; Moreover, a short response time
810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.
Caiyang Wu, Wei Zhou, Niangjuan Yao, Xinyue Xu, Yue Qu, Zhibo Zhang, Jing Wu, Lin Jiang, Zhiming Huang, Junhao Chu
https://iopscience.iop.org/article/10.7567/1882-0786/ab14fc
We demonstrated a Si-based photoelectric detector with silicon-on-insulator material. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a responsivity of 49.3 kV/W and NEP of 0.38 pW/√Hz at 20-40 GHz, and achieved a responsivity of 3.3 kV/W and NEP of 5.7 pW/√Hz at 0.165-0.173 THz; Moreover, a short response time
Sunday, September 16, 2018
Abstract-Terahertz communication windows and their point-to-point transmission verification
Zhenyang Xiao, Qiujie Yang, Jingguo Huang, Zhiming Huang, Wei Zhou, Yanqing Gao, Rong Shu, and Zhiping He
https://www.osapublishing.org/ao/abstract.cfm?uri=ao-57-27-7673
Terahertz communication is recognized as a transformational technology that can meet the future demands of point-to-point communication. The study of terahertz atmospheric transmission characteristics is important for guiding the terahertz communication window selection process. In this report, based on the modified ITU-R P.676-10 model, we determined that the terahertz communication windows above 100 GHz were located at the bands at approximately 140, 220, 340, 410, and 460 GHz, which is verified by recent experiments. We also verified the feasibility of indoor point-to-point communication by the 110 m transmission experiment through the communication window around 460 GHz.
© 2018 Optical Society of America
Wednesday, January 6, 2016
Abstract-Terahertz Detection: Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection
Terahertz (THz) is the gap between infrared and microwave frequencies. THz detection is still a formidable challenge even though no suitable theory has been built until now, although considerable mechanisms have been proposed. On page 112, Z. Huang and co-workers propose a unique theory to realize an excellent photoelectric effect and experimentally demonstrate its extreme sensitivity to room-temperature THz detection.
Friday, November 6, 2015
Abstract-Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection
Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor using a wrapped metal–semiconductor–metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.
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