Friday, November 6, 2015

Abstract-Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection

Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor using a wrapped metal–semiconductor–metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.

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