Friday, February 13, 2015

Abstract-Ultrabroadband terahertz conductivity of highly doped ZnO and ITO

Ultrabroadband terahertz conductivity of highly doped ZnO and ITO

Tianwu Wang, Maksim Zalkovskij, Krzysztof Iwaszczuk, Andrei V. Lavrinenko, Gururaj V. Naik, Jongbum Kim, Alexandra Boltasseva, and Peter Uhd Jepsen  »View Author Affiliations
Optical Materials Express, Vol. 5, Issue 3, pp. 566-575 (2015)

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The broadband complex conductivities of transparent conducting oxides (TCO), namely aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by terahertz time domain spectroscopy (THz-TDS) in the frequency range from 0.5 to 18 THz using air plasma techniques, supplemented by the photoconductive antenna (PCA) method. The complex conductivities were accurately calculated using a thin film extraction algorithm and analyzed in terms of the Drude conductivity model. All the measured TCOs have a scattering time below 15 fs. We find that a phonon response must be included in the description of the broadband properties of AZO and GZO for an accurate extraction of the scattering time in these materials, which is strongly influenced by the zinc oxide phonon resonance tail even in the low frequency part of the spectrum. The conductivity of AZO is found to be more thickness dependent than GZO and ITO, indicating high importance of the surface states for electron dynamics in AZO. Finally, we measure the transmittance of the TCO films from 10 to 200 THz with Fourier transform infrared spectroscopy (FTIR) measurements, thus closing the gap between THz-TDS measurements (0.5-18 THz) and ellipsometry measurements (200-1000 THz).
© 2015 Optical Society of America

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