Caiyang Wu, Wei Zhou, Niangjuan Yao, Xinyue Xu, Yue Qu, Zhibo Zhang, Jing Wu, Lin Jiang, Zhiming Huang, Junhao Chu
https://iopscience.iop.org/article/10.7567/1882-0786/ab14fc
We demonstrated a Si-based photoelectric detector with silicon-on-insulator material. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a responsivity of 49.3 kV/W and NEP of 0.38 pW/√Hz at 20-40 GHz, and achieved a responsivity of 3.3 kV/W and NEP of 5.7 pW/√Hz at 0.165-0.173 THz; Moreover, a short response time
810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.
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