Showing posts with label Vincas Tamošiūnas. Show all posts
Showing posts with label Vincas Tamošiūnas. Show all posts

Saturday, September 22, 2018

Abstract-Focusing of Terahertz Radiation With Laser-Ablated Antireflective Structures



 Milda Tamošiūnaitė,  Simonas Indrišiūnas, Vincas Tamošiūnas,   Linas Minkevičius,  Andrzej Urbanowicz,  Gediminas Račiukaitis,   Irmantas Kašalynas,  Gintaras Valuši

https://ieeexplore.ieee.org/document/8419328/

Numerical simulations and experimental characterization of laser-ablated focusing antireflective and phase-shifting structures for terahertz frequencies are presented. More than 10% shift of reflectance minimum to lower frequencies was predicted by simulations for relatively coarse structures with the period of 100  μ m in comparison with that of a substantially smaller period and with results of the model used for the design of antireflective surfaces in the terahertz range. Such a shift of the resonance frequency can be employed to optimize the thickness of antireflective layers simultaneously obtaining additional means of more precise control of layer properties due to ablation of larger structures. Nearly 90% transmittance of silicon wafers within 0.5–0.6 THz frequencies was confirmed experimentally. Optical path differences equivalent to a half period at 0.53 THz, suitable for applications in high-efficiency zone plates, were demonstrated with high transmittance simultaneously. Possibilities of delay adjustment up to one wavelength were illustrated by numerical simulations. A focusing binary zone plate for 0.6 THz was produced employing phase-shift differences of the dual-function antireflective layer. Its close to diffraction-limited focusing performance was evaluated, further confirming sufficient uniformity of the structured layer.

Tuesday, September 19, 2017

Abstract-Compact solutions for spectroscopic solid-state-based terahertz imaging systems


Rimvydas Venckevičius,  Linas Minkevičius,  Antanas Reklaitis, Vincas Tamošiūnas,  Irmantas Kašalyns,  Domas Jokubauskis,  Dalius Seliuta,  Bogdan Voisiat,  Gediminas Račiukaitis,  Gintaras Valušis,

https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10383/103830S/Compact-solutions-for-spectroscopic-solid-state-based-terahertz-imaging-systems/10.1117/12.2273353.short

Convenience in use of room-temperature terahertz (THz) imaging systems, reduction of their dimensions and presence of on-chip solutions remains one of prime interests for direct implementation aims. Solid-state-based solutions in miniaturization of spectroscopic THz imaging systems including novel semiconductor nanostructures bias-free emitters, diffractive THz optics components and their on-chip integration with THz detectors are discussed. In particular, pulsed optoelectronic terahertz emitter based on a δ-doped p-i-n-i GaAs/AlxGa1−xAs heterostructure was studied and it is demonstrated that the heterostructure can serve as efficient antenna- and bias-free surface emitter. Diffractive optics elements – Fresnel zone plates –with integrated band-pass filters were simulated employing Finite-difference time domain method. Structures were fabricated using the laser direct writing and investigated using electronic THz sources and an optically pumped terahertz laser. Advantages of on-chip integration of diffractive optics and bow-tie-shaped InGaAs-based terahertz detectors are revealed via detection enhancement. Bow-tie diodes properties in frequency scale and detection sensitivity are considered and compared for different materials. Homodyne detection and imaging of low-absorbing objects at 0.6 THz are demonstrated and discussed.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Thursday, April 13, 2017

Abstract-Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors


Linas Minkevičius, Vincas Tamošiūnas, Martynas Kojelis, Ernestas Žąsinas, Virginijus Bukauskas, Arūnas Šetkus, Renata Butkutė, Irmantas,  Kašalynas, Gintaras Valušis,

https://link.springer.com/article/10.1007%2Fs10762-017-0382-1

A detailed electrical characterization of high-performance bow-tie InGaAs-based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Current-voltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper insight into the processes involved in detector operation. In addition, we performed finite-difference time-domain (FDTD) simulations to reveal features related to changes in the electric field due to the metal detector contacts. The investigation revealed that field-effect-induced conductivity modulation is a possible mechanism contributing to the high sensitivity of the studied detectors.

Saturday, March 26, 2016

Abstract-Spectroscopic Terahertz Imaging at Room Temperature Employing Microbolometer Terahertz Sensors and Its Application to the Study of Carcinoma Tissues



1 Department of Optoelectronics, Center for Physical Sciences and Technology, Savanoriu Ave. 231, Vilnius 02300, Lithuania2 Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, Ljubljana 1000, Slovenia3 Instituto de Investigacao e Inovacao em Saudeand, Instituto de Engenharia Biomedica, University of Porto, Rua do Campo Alegre, 823, Porto 4150-180, Portugal
* Author to whom correspondence should be addressed.
Academic Editors: Dragan Indjin and Vincenzo Spagnolo
Received: 6 February 2016 / Revised: 4 March 2016 / Accepted: 18 March 2016 / Published: 25 March 2016


A terahertz (THz) imaging system based on narrow band microbolometer sensors (NBMS) and a novel diffractive lens was developed for spectroscopic microscopy applications. The frequency response characteristics of the THz antenna-coupled NBMS were determined employing Fourier transform spectroscopy. The NBMS was found to be a very sensitive frequency selective sensor which was used to develop a compact all-electronic system for multispectral THz measurements. This system was successfully applied for principal components analysis of optically opaque packed samples. A thin diffractive lens with a numerical aperture of 0.62 was proposed for the reduction of system dimensions. The THz imaging system enhanced with novel optics was used to image for the first time non-neoplastic and neoplastic human colon tissues with close to wavelength-limited spatial resolution at 584 GHz frequency. The results demonstrated the new potential of compact RT THz imaging systems in the fields of spectroscopic analysis of materials and medical diagnostics.