Thursday, April 13, 2017
Abstract-Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors
Linas Minkevičius, Vincas Tamošiūnas, Martynas Kojelis, Ernestas Žąsinas, Virginijus Bukauskas, Arūnas Šetkus, Renata Butkutė, Irmantas, Kašalynas, Gintaras Valušis,
A detailed electrical characterization of high-performance bow-tie InGaAs-based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Current-voltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper insight into the processes involved in detector operation. In addition, we performed finite-difference time-domain (FDTD) simulations to reveal features related to changes in the electric field due to the metal detector contacts. The investigation revealed that field-effect-induced conductivity modulation is a possible mechanism contributing to the high sensitivity of the studied detectors.