Abstract-Milliwatt-class broadband THz source driven by a 112 W, sub-100 fs thin-disk laser

F. Meyer, N. Hekmat, T. Vogel, A. Omar, S. Mansourzadeh, F. Fobbe, M. Hoffmann, Y. Wang, and C. J. Saraceno

Fig. 1. Complete experimental setup consisting of the modelocked thin-disk laser (a), Herriott type MPC and dispersive mirrors (b), as well as THz generation and detection setup (c).

https://www.osapublishing.org/oe/abstract.cfm?uri=oe-27-21-30340

We demonstrate a high repetition-rate, single-cycle THz source with a maximum average power of 1.35 mW, operating at a center frequency of 2 THz. This result was obtained by optical rectification (OR) in GaP using an amplifier-free, nonlinearly compressed modelocked thin-disk oscillator based on Yb:YAG, delivering 8.4 µJ pulses with 88 fs duration at a repetition rate of 13.4 MHz, resulting in driving pulses for OR with 112 W average power and 80 MW peak power. To the best of our knowledge, our result represents the highest average power so far achieved with OR in GaP. The demonstrated performance is very attractive for improving current linear THz time-domain spectroscopy experiments, which are currently restricted by low signal-to-noise ratio and long measurement times.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Abstract-Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector

S. Boubanga-Tombet^1,a), Y. Tanimoto¹, A. Satou¹, T. Suemitsu¹, Y. Wang²,H. Minamide², H. Ito², D. V. Fateev^3,4, V. V. Popov^3,4 and T. Otsuji¹
 HIDE AFFILIATIONS
1 Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
2 RIKEN Sendai, 519-1399 Aramaki Aoba, Aoba-ku, Sendai 980-0845, Japan
3 Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), 410019 Saratov, Russia
4 Saratov State University, 410012 Saratov, Russia
a) Author to whom correspondence should be addressed. Electronic mail: stephanealbon@hotmail.com
Appl. Phys. Lett. 104, 262104 (2014); http://dx.doi.org/10.1063/1.4886763

We report on the detection of terahertz radiation by an on-chip planar asymmetric plasmonicstructure in the frequency region above one terahertz. The detector is based on a field-effect transistor that has a dual grating gate structure with an asymmetric unit cell, which provides a geometrical asymmetry within the structure. Biasing the detector with a dc source-to-drain current in the linear region of the current-voltage characteristic introduces an additional asymmetry (electrical asymmetry) that enhances the detector responsivity by more than one order of magnitude (by a factor of 20) as compared with the unbiased case due to the cooperative effect of the geometrical and electrical asymmetries. In addition to the responsivity enhancement, we report a relatively low noise equivalent power and a peculiar non-monotonic dependence of the responsivity on the frequency, which results from the multi-plasmonic-cavity structure of the device.