Abstract-A 240 GHz Active Multiplier-Based Signal Source for Millimeter-Wave/Terahertz Applications

M. Hossain, S. Boppel, W. Heinrich, and V. Krozer

https://www.fbh-berlin.de/publikationen-patente/publikationen/title/a-240-ghz-active-multiplier-based-signal-source-for-millimeter-waveterahertz-applications

This paper presents a 240 GHz signal source using a 0.8 µm transferred substrate (TS) InP-HBT technology. The source is based on an active tripler and delivers -3 dBm peak output power at 234 GHz, with a DC consumption of only 50 mW, which corresponds to 0.9% conversion efficiency. A bandpass filter at the output suppresses all the unwanted harmonics. The tripler achieves more than 50 GHz bandwidth and exhibits very low unwanted harmonics. The core area of the source is only 1.3 × 0.7 mm2.

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Abstract-Thermal noise-limited sensitivity of FET-based terahertz detectors

D. Cibiraite, M. Bauer,  A. Lisauskas, V. Krozer, H. G. Roskos,  A. Rämer , V. Krozer ;  W. Heinrich,  S. Pralgauskaite,  J. Zdanevicius,  J. Matukas,  A. Lisauskas , M. Andersson,  J. Stake

http://ieeexplore.ieee.org/document/7986008/


Here we present a detailed study on estimation of noise-dependent parameters, such as signal-to-noise ratio (SNR) or noise equivalent power (NEP), of field-effect-transistor based terahertz detectors (TeraFETs). Commonly, these parameters are estimated from a well-known assumption, that detector's performance is limited by the thermal noise of transistor's channel. However, practice shows that the influence of other noise sources or transient effects is considerable. We summarize TeraFET noise measurements performed on different material systems based transistors, such as AlGaN/GaN, AlGaAs/GaAs, silicon CMOS, and monolayer graphene. We have achieved a good agreement between thermal noise and measured data. However, attention has to be paid to gate leakage currents and slow defect charging and discharging effects, which can strongly influence TeraFET's performance estimation.