Abstract-Efficient optical-to-terahertz conversion in large-area InGaAs photo-Dember emitters with increased indium content

 

I. E. Ilyakov, B. V. Shishkin, V. L. Malevich, D. S. Ponomarev, R. R. Galiev, A. Yu. Pavlov, A. E. Yachmenev, S. P. Kovalev, M. Chen, R. A. Akhmedzhanov,  R. A. Khabibullin, 

https://www.osapublishing.org/ol/abstract.cfm?uri=ol-46-14-3360

In this Letter, optical-to-terahertz (THz) conversion of 800 nm femtosecond laser pulses in large-area bias-free InGaAs emitters based on photo-Dember (PD) and lateral photo-Dember (LPD) effects is experimentally investigated. We use metamorphic buffers to grow sub-micrometer thick In𝑥Ga1−𝑥As${\mathrm{I}\mathrm{n}}_x{\mathrm{G}\mathrm{a}}_{1-x}\mathrm{A}\mathrm{s}$ layers with indium mole fractions 𝑥=0.37$x=0.37$, 0.53, and 0.70 on a GaAs substrate. A strong enhancement of THz output energy with an increase of indium content is observed. On the surface of the sample providing the strongest emission (𝑥=0.7$x=0.7$), we have fabricated a 1.5cm2$1.5{\mathrm{c}\mathrm{m}}^2$ area of asymmetrically shaped metallic grating for LPD emission. This LPD emitter allows achieving high conversion efficiency of 0.24⋅10−3$0.24\cdot {10}^{-3}$ and a broad generation bandwidth of up to 6 THz. We also demonstrate that there is no significant difference in the conversion efficiency when operating at 1 and 200 kHz repetition rates. Our results show that large-area LPD emitters give a convenient, competitive way to generate intense high-repetition-rate THz pulses.

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