S Sasa, Y Kinoshita, M Tatsumi, M Koyama, T Maemoto, S Hamauchi, I Kawayama, M Tonouchi,
http://iopscience.iop.org/article/10.1088/1742-6596/906/1/012015/meta;jsessionid=50B34D8FF8D8FC0CE738A85D43CC1984.c3.iopscience.cld.iop.org
GaSb/InAs heterostructures were investigated for the enhancement of terahertz (THz) radiation from an InAs thin film excited by a femtosecond laser. Taking advantage of the large conduction band discontinuity between GaSb and InAs, electrons excited in the GaSb layer gain a large excess energy when injected into the InAs radiation layer. Enhancement of the THz radiation by a factor of approximately two was observed when the surface pinning position was controlled to reduce the surface electric field by the introduction of a thin InAs cap layer.
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