J. A. Delgado Notario, E. Javadi, J. E. Velázquez, E. Diez, Y. M. Meziani, K. Fobelets,
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10439/1043907/Detection-of-terahertz-radiation-using-submicron-field-effect-transistors-and/10.1117/12.2278208.pdf?SSO=1
We investigated room temperature detection of
terahertz radiation by using two different types of transistors (Strained
Silicon Modulation field effect transistor, GaAs PHEMT). Experimental results
show a good level of response under excitation at 0.3 THz. Competitive
performance parameters were obtained (NEP and responsivity) in comparison with
other detectors. Enhancement of the photoresponse signal by imposing a dc
drain-to-source current (Ids) was observed
experimentally. Inspection of hidden objects by using those devices within a
terahertz imaging setup was demonstrated at 300 GHz and a better image was
obtained under Ids.
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