Jong-Ryul Yang, Seong-Tae Han, Donghyun Baek
http://www.mdpi.com/1424-8220/17/9/2069
We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m2 input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB.
No comments:
Post a Comment