Thursday, November 10, 2016

Abstract-Strain-Compensated InGaAs Terahertz Quantum Cascade Lasers

Institute for Quantum Electronics, ETH Zurich, Auguste-Piccard-Hof 1, 8093 Zurich, Switzerland
ACS Photonics, Article ASAP
DOI: 10.1021/acsphotonics.6b00376
Publication Date (Web): November 9, 2016
Copyright © 2016 American Chemical Society

Strain-compensated InGaAs/AlInGaAs terahertz quantum cascade lasers grown by molecular beam epitaxy are reported. A choice of a moderate amount of strain in the wells (−0.24%) and in the quaternary barriers (+1.07%) makes it possible to coherently grow an active region as thick as 10 μm. Lasers based on a four quantum well design emit at 3.3 THz with a maximum operation temperature of 149 K, which is among the highest temperatures of InGaAs-based THz quantum cascade lasers.

No comments: