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Wednesday, August 6, 2014
Abstract-Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy
C. S. Ponseca, Jr., H. Němec, J. Wallentin, N. Anttu, J. P. Beech, A. Iqbal, M. Borgström, M.-E. Pistol, L. Samuelson, and A. Yartsev
Terahertz spectroscopy is employed for the noncontact measurement of transversal mobility in InP nanowires, wherein photonic effects (waveguiding of excitation beam and propagation of terahertz beam in a complex gradient environment) were successfully deconvoluted. Monte Carlo calculations accounting for electron localization and heavy doping were used to determine electron momentum relaxation time corresponding to electron mobility ≥3000cm2/Vs, which is similar to that in bulk InP. The developed approach paves a way for noncontact determination of charge mobility in advanced semiconductor nanostructures.