By a News
Reporter-Staff News Editor
at Electronics Newsweekly
-- From Alexandria,
Virginia , VerticalNews journalists report that a patent by the
inventors Baik, Chan-wook (Yongin-si, KR); Ahn, Ho-young (Suwon -si,
KR), filed on February 21,
2012 , was published online on July
1, 2014 .
The patent's assignee for patent number
8768115 is Samsung
Electronics Co., Ltd. (Suwon -si,
KR).
News editors obtained the following quote from
the background information supplied by the inventors: "The present disclosure
relates to a terahertz interaction circuit, and more particularly, to a
terahertz interaction circuit having a narrow open cavity structure.
"A terahertz frequency range between a
microwave frequency range and an optical frequency range is used in the fields
of molecular optics, biophysics, medical science, spectroscopy, or imaging or
security. However, there have been few developments in the field of terahertz
oscillators or amplifiers for generating terahertz waves due to physical and
engineering limitations. Recently, as various new theories and fine processing
technologies are introduced, the terahertz oscillators or amplifiers are being
developed.
"In particular, there has been proposed
an interaction circuit for oscillating terahertz waves through the interaction
between an electronic beam and an electromagnetic wave in a terahertz
oscillator using a vacuum electronic technology. In such an interaction
circuit, electric field magnitude and interaction impedance are characteristic
factors. As the strength of an electric field magnitude increases, the
efficiency of converting the energy of an electronic beam into electromagnetic
wave energy is improved. Interaction impedance is a factor in output efficiency
and is proportional to the square of the electric field magnitude.
"Thus, the electric field magnitude
affects the interaction impedance."
As a supplement to the background information
on this patent, VerticalNews correspondents also obtained the inventors'
summary information for this patent: "One of more embodiments provide a
terahertz interaction circuit having a narrow open cavity structure.
"According to an aspect of an embodiment,
there is provided a terahertz interaction circuit that includes a waveguide
through which electromagnetic waves pass, the waveguide having a folded shape
and including a narrow open cavity portion; and an electron beam tunnel through
which an electron beam passes, the electron beam tunnel penetrating through the
waveguide.
"The electron beam tunnel may penetrate
through the open cavity portion of the waveguide.
"The waveguide may be folded cyclically,
each cycle of the waveguide may comprise an open cavity portion, and the
electron beam tunnel may penetrate through the open cavity portion of each
cycle of the waveguide.
"The waveguide may include a first
tapered portion connected to one side of the open cavity portion and a second
tapered portion connected to the other side of the open cavity portion, each of
the first tapered portion and the second tapered portion having a cross section
that gradually decreases toward the open cavity portion.
"The waveguide may have a rectangular
cross section.
"The open cavity portion may have a shape
that is narrowed along a direction in which the electron beam proceeds as
compared to the remaining portions of the waveguide.
"The waveguide may have a circular cross
section.
"The electron beam tunnel may have a
rectangular or circular cross section.
"Electromagnetic waves of a millimeter
wavelength range, a sub-millimeter wavelength range, or a terahertz frequency
range may proceed through the waveguide.
"The waveguide and the electron beam
tunnel may be formed in a block.
"The block may be formed of a metal
material.
"The block may be formed of a non-metal
material and inner wall surfaces of the waveguide and the electron beam tunnel
are coated with metal."
For additional information on this patent,
see: Baik, Chan-wook; Ahn, Ho-young. Terahertz Interaction Circuit with Open
Cavity Portion. U.S. Patent Number 8768115, filed February 21, 2012 , and
published online on July
1, 2014 . Patent URL:
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8768115.PN.&OS=PN/8768115RS=PN/8768115
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