Abstract-High performance bilayer-graphene Terahertz detectors

Davide Spirito, Dominique Coquillat, Sergio L. De Bonis, Antonio Lombardo, Matteo Bruna, Andrea C. Ferrari, Vittorio Pellegrini, Alessandro Tredicucci, Wojciech Knap, Miriam S. Vitiello

http://arxiv.org/abs/1312.3737
We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2V/W(1.3mA/W) and a noise equivalent power ∼2×10−9W/Hz−1/2 in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.