http://opticalengineering.spiedigitallibrary.org/article.aspx?articleid=1787281&journalid=92
Taiichi Otsuji
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Takayuki Watanabe
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Stephane Albon Boubanga Tombet
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Akira Satou
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Victor Ryzhii
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Vyacheslav Popov
Russian Academy of Science, Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), 410019 Saratov, Russia
Wojciech Knap
University of Montpellier-CNRS, LC2 Laboratories, UMR 5221, 34095 Montpellier, France
Opt. Eng. 53(3), 031206 (Nov 27, 2013). doi:10.1117/1.OE.53.3.031206
History: Received May 23, 2013; Revised August 31, 2013; Accepted October 28, 2013
Abstract
The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron-mobility transistor and incorporates the authors’ original asymmetrically interdigitated dual-grating gates. Excellent THz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on THz imaging are also presented.
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