Showing posts with label Vyacheslav Popov. Show all posts
Showing posts with label Vyacheslav Popov. Show all posts

Saturday, January 20, 2018

Abstract-Giant amplification of terahertz plasmons in a double-layer graphene


Mikhail Morozov,  Ilya Moiseenko,  Vyacheslav Popov,

http://iopscience.iop.org/article/10.1088/1361-648X/aaa648/pdf

Amplification of terahertz plasmons in a pair of parallel active graphene monolayers is studied theoretically. Plasmon wave in symmetric double-layer graphene structure splits into two branches with a symmetric and an antisymmetric distribution of tangential to graphene component of the electric field across the plane of symmetry of the structure. It is shown that normalized to the wavelength terahertz plasmon amplification factor of the symmetric mode in the double-layer graphene structure could be greater than that in a single graphene layer by 4 orders of magnitude.

Thursday, November 28, 2013

Abstract-Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations





http://opticalengineering.spiedigitallibrary.org/article.aspx?articleid=1787281&journalid=92
Taiichi Otsuji
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Takayuki Watanabe
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Stephane Albon Boubanga Tombet
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Akira Satou
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Victor Ryzhii
Tohoku University, Research Institute of Electrical Communication, 9808577 Sendai, Japan
Vyacheslav Popov
Russian Academy of Science, Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), 410019 Saratov, Russia
Wojciech Knap
University of Montpellier-CNRS, LC2 Laboratories, UMR 5221, 34095 Montpellier, France
Opt. Eng. 53(3), 031206 (Nov 27, 2013). doi:10.1117/1.OE.53.3.031206
History: Received May 23, 2013; Revised August 31, 2013; Accepted October 28, 2013



Abstract


The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron-mobility transistor and incorporates the authors’ original asymmetrically interdigitated dual-grating gates. Excellent THz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on THz imaging are also presented.
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