Showing posts with label surface optical rectification. Show all posts
Showing posts with label surface optical rectification. Show all posts

Sunday, April 29, 2018

Abstract-High-energy terahertz surface optical rectification



L.Peters, J.Tunesi, A.Pasquazi, M.Peccianti,



https://www.sciencedirect.com/science/article/pii/S2211285518300363


The interest in surface terahertz emitters lies in their extremely thin active region, typically hundreds of atomic layers, and the agile surface scalability. The ultimate limit in the achievable emission is determined by the saturation of the several different mechanisms concurring to the THz frequency conversion. Although there is a very prolific debate about the contribution of each process, surface optical rectification has been highlighted as the dominant process at high excitation, but the effective limits in the conversion are largely unknown.
The current state of the art suggests that in field-induced optical rectification a maximum limit of the emission may exist and it is ruled by the photocarrier induced neutralisation of the medium's surface field. This would represent the most important impediment to the application of surface optical rectification in high-energy THz emitters.
We experimentally unveil novel physical insights in the THz conversion at high excitation energies mediated by the ultrafast surface optical rectification process. The main finding is that the expected total saturation of the Terahertz emission vs pump energy does not actually occur. At high energy, the surface field region contracts towards the surface. We argue that this mechanism weakens the main saturation process, re-establishing a clearly observable quadratic dependence between the emitted THz energy and the excitation. This is relevant in enabling access to intense generation at high fluences.

Wednesday, December 13, 2017

Abstract-Terahertz Surface Emission from Layered MoS2 Crystal: Competition Between Surface Optical Rectification and Surface Photocurrent Surge



Yuanyuan HuangLipeng ZhuZehan YaoLonghui ZhangChuan HeQiyi ZhaoJintao Bai, and Xin Long Xu


http://pubs.acs.org/doi/abs/10.1021/acs.jpcc.7b09723?mi=aayia761&af=R&AllField=nano&target=default&targetTab=std

Terahertz (THz) radiation of layered molybdenum disulfide (MoS2) crystal under femtosecond laser irradiation was observed using THz surface emission spectroscopy under variable angle transmission configuration. Although MoS2 demonstrates inversion symmetry, surface-symmetry–breaking will introduce the resonant optical rectification, which is consistent with the incident polarization and azimuthal angle dependences of the THz radiation from MoS2. However, the surface depletion field induced THz radiation will make important contribution under oblique incidence, which is consistent with the radiation saturation due to the electrostatic screening effect by photoexcited carriers. This pump dependent saturable THz radiation can be fitted well by the calculation from Maxwell equations with electromagnetic boundary condition. The maximum of surface depletion field is estimated to be 1.45×104 V/cm with 130 nm in depth under -40oincidence. Interestingly, when the incident angle is tuned from -40o to 0o, the optical rectification contribution varies from 40% to 90%. In addition, MoS2 is diagnosed to be p-type from THz waveforms by comparison with GaAs (100). The results afford not only comprehensive understanding of THz radiation from layered materials like MoS2, but also put forward THz emission spectroscopy for characterizing the surface and interface properties of two-dimensional materials.