Showing posts with label quantum tunneling. Show all posts
Showing posts with label quantum tunneling. Show all posts

Thursday, February 4, 2021

Quantum tunneling in graphene advances the age of terahertz wireless communications


 https://www.newswise.com/articles/quantum-tunneling-in-graphene-advances-the-age-of-terahertz-wireless-communications

Newswise — Scientists from MIPT, Moscow Pedagogical State University and the University of Manchester have created a highly sensitive terahertz detector based on the effect of quantum-mechanical tunneling in graphene. The sensitivity of the device is already superior to commercially available analogs based on semiconductors and superconductors, which opens up prospects for applications of the graphene detector in wireless communications, security systems, radio astronomy, and medical diagnostics. The research results are published in a high-rank journal Nature Communications.

Information transfer in wireless networks is based on transformation of a high-frequency continuous electromagnetic wave into a discrete sequence of bits. This technique is known as signal modulation. To transfer the bits faster, one has to increase the modulation frequency. However, this requires synchronous increase in carrier frequency. A common FM-radio transmits at frequencies of hundred megahertz, a Wi-Fi receiver uses signals of roughly five gigahertz frequency, while the 5G mobile networks can transmit up to 20 gigahertz signals. This is far from the limit, and further increase in carrier frequency admits a proportional increase in data transfer rates. Unfortunately, picking up signals with hundred gigahertz frequencies and higher is an increasingly challenging problem.

A typical receiver used in wireless communications consists of a transistor-based amplifier of weak signals and a demodulator that rectifies the sequence of bits from the modulated signal. This scheme originated in the age of radio and television, and becomes inefficient at frequencies of hundreds of gigahertz desirable for mobile systems. The fact is that most of the existing transistors aren’t fast enough to recharge at such a high frequency.

An evolutionary way to solve this problem is just to increase the maximum operation frequency of a transistor. Most specialists in the area of nanoelectronics work hard in this direction. A revolutionary way to solve the problem was theoretically proposed in the beginning of 1990’s by physicists Michael Dyakonov and Michael Shur, and realized, among others, by the group of authors in 2018. It implies abandoning active amplification by transistor, and abandoning a separate demodulator. What’s left in the circuit is a single transistor, but its role is now different. It transforms a modulated signal into bit sequence or voice signal by itself, due to non-linear relation between its current and voltage drop.

In the present work, the authors have proved that the detection of a terahertz signal is very efficient in the so-called tunneling field-effect transistor. To understand its work, one can just recall the principle of an electromechanical relay, where the passage of current through control contacts leads to a mechanical connection between two conductors and, hence, to the emergence of current. In a tunneling transistor, applying voltage to the control contact (termed as ‘’gate’’) leads to alignment of the energy levels of the source and channel. This also leads to the flow of current. A distinctive feature of a tunneling transistor is its very strong sensitivity to control voltage. Even a small "detuning" of energy levels is enough to interrupt the subtle process of quantum mechanical tunneling. Similarly, a small voltage at the control gate is able to “connect” the levels and initiate the tunneling current.

“The idea of ​​a strong reaction of a tunneling transistor to low voltages is known for about fifteen years,” says Dr. Dmitry Svintsov, one of the authors of the study, head of the laboratory for optoelectronics of two-dimensional materials at the MIPT center for photonics and 2D materials. “But it’s been known only in the community of low-power electronics. No one realized before us that the same property of a tunneling transistor can be applied in the technology of terahertz detectors. Georgy Alymov (co-author of the study) and I were lucky to work in both areas. We realized then: if the transistor is opened and closed at a low power of the control signal, then it should also be good in picking up weak signals from the ambient surrounding. "

The created device is based on bilayer graphene, a unique material in which the position of energy levels (more strictly, the band structure) can be controlled using an electric voltage. This allowed the authors to switch between classical transport and quantum tunneling transport within a single device, with just a change in the polarities of the voltage at the control contacts. This possibility is of extreme importance for an accurate comparison of the detecting ability of a classical and quantum tunneling transistor.

The experiment showed that the sensitivity of the device in the tunnelling mode is few orders of magnitude higher than that in the classical transport mode. The minimum signal distinguishable by the detector against the noisy background already competes with that of commercially available superconducting and semiconductor bolometers. However, this is not the limit - the sensitivity of the detector can be further increased in "cleaner" devices with a low concentration of residual impurities. The developed detection theory, tested by the experiment, shows that the sensitivity of the "optimal" detector can be a hundred times higher.

“The current characteristics give rise to great hopes for the creation of fast and sensitive detectors for wireless communications,” says the author of the work, Dr. Denis Bandurin. And this area is not limited to graphene and is not limited to tunnel transistors. We expect that, with the same success, a remarkable detector can be created, for example, based on an electrically controlled phase transition. Graphene turned out to be just a good launching pad here, just a door, behind which is a whole world of exciting new research. "

The results presented in this paper are an example of a successful collaboration between several research groups. The authors note that it is this format of work that allows them to obtain world-class scientific results. For example, earlier, the same team of scientists demonstrated how waves in the electron sea of ​​graphene can contribute to the development of terahertz technology. "In an era of rapidly evolving technology, it is becoming increasingly difficult to achieve competitive results." - comments Dr. Georgy Fedorov, deputy head of the nanocarbon materials laboratory, MIPT, - "Only by combining the efforts and expertise of several groups can we successfully realize the most difficult tasks and achieve the most ambitious goals, which we will continue to do."

Thursday, September 17, 2015

Abstract-Terahertz quantum plasmonics of nano-slot antennas in nonlinear regime.


Kim JYKang BJPark JBahk YMKim WTRhie JJeon HRotermund FKim DS.
http://www.ncbi.nlm.nih.gov/pubmed/26372787

Quantum tunneling in plasmonic nanostructures has presented an interesting aspect of incorporating quantum mechanics into classical optics. However, the study has been limited to the sub-nanometer gap regime. Here, we newly extend quantum plasmonics to gap widths well over 1 nm by taking advantage of the low-frequency terahertz regime. Enhanced electric fields of up to 5 V/nm induce tunneling of electrons in different arrays of ring-shaped nano-slot antennas of gap widths from 1.5 nm to 10 nm, which lead to a significant nonlinear transmission decrease. These observations are consistent with theoretical calculations considering terahertz-funneling-induced electron tunneling across the gap.

Tuesday, June 24, 2014

Abstract-Quantum Plasmon Resonances Controlled by Molecular Tunnel Junctions


  1. Christian A. Nijhuis*,1,3,5,6
    1. http://www.sciencemag.org/content/343/6178/1496.abstract
-Author Affiliations
  1. 1Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
  2. 2Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, 16-16 Connexis North, Singapore 138632, Singapore.
  3. 3Institute of Materials Research and Engineering, A*STAR, 3 Research Link, Singapore 117602, Singapore.
  4. 4Singapore University of Technology and Design, 20 Dover Drive, Singapore 138682, Singapore.
  5. 5Graphene Research Center, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
  6. 6Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, Singapore 117574, Singapore.
  1. *Corresponding author. E-mail: baiping@ihpc.a-star.edu.sg (P.B.), michel.bosman@gmail.com (M.B.),christian.nijhuis@nus.edu.sg (C.A.N.)


Quantum tunneling between two plasmonic resonators links nonlinear quantum optics with terahertz nanoelectronics. We describe the direct observation of and control over quantum plasmon resonances at length scales in the range 0.4 to 1.3 nanometers across molecular tunnel junctions made of two plasmonic resonators bridged by self-assembled monolayers (SAMs). The tunnel barrier width and height are controlled by the properties of the molecules. Using electron energy-loss spectroscopy, we directly observe a plasmon mode, the tunneling charge transfer plasmon, whose frequency (ranging from 140 to 245 terahertz) is dependent on the molecules bridging the gaps.

Monday, September 9, 2013

NEXT BIG FUTURE: Diode and Atomic Layer Deposition approaches to nanoantenna solar energy and terahertz transistors



http://nextbigfuture.com/2013/09/trying-to-nanoantenna-arrays-which.html#more
Diode Approach has had fundamental problems but adding a second insulator layer could helpThe power conversion efficiency of broadband antennas, log-periodic, square-spiral, and archimedian-spiral antennas, coupled to Metal-Insulator-Metal and Esaki rectifying diodes has been obtained from both theoretical and numerical simulation perspectives. The results show efficiencies in the order of 10^−6 to 10^−9 for these rectifying mechanisms, which is very low for practical solar energy harvesting applications. This is mainly caused by the poor performance of diodes at the given frequencies and also due to the antenna-diode impedance mismatch. If only losses due to antenna-diode impedance mismatch are considered an efficiency of about 10^−3 would be obtained. In order to make optical antennas useful for solar energy harvesting new rectification devices or a different harvesting mechanism should be used.

IM diodes use quantum tunneling, which permits electrons to jump from one metal electrode to the other without interacting with the intervening insulator layer -- hence the power and heat reductions. So far, their development has been slow going.

Now Oregon State University (OSU) researchers claim to have invigorated the technology by adding a second insulator layer to produce an MIIM device that aims to solve the problems with MIM devices and come closer to taking the technology mainstream.

The two insulator layers -- which for Conley's work was hafnium oxide and aluminum oxide -- enables what he called "step tunneling." Step tunneling allows more precise control of the diode asymmetry and thus its rectification capabilities at low voltages.

As a result, Conley sees his MIIM devices are poised to improve all sorts of electronic devices in wide use today, from liquid crystal displays to cell phones and televisions, as well as new types of devices such as infrared solar cells that convert radiant heat into electricity.

The researchers hope to optimize their process, then tackle applications that use even more metal-insulator layers, such as transistors.
ALD to make nanoantenna arrays is another approach

For years, scientists have studied the potential benefits of a new branch of solar energy technology that relies on incredibly small nanosized antenna arrays that are theoretically capable of harvesting more than 70 percent of the sun’s electromagnetic radiation and simultaneously converting it into usable electric power.

Nextbigfuture covered this work back in February, 2013

The technology would be a vast improvement over the silicon solar panels in widespread use today. Even the best silicon panels collect only about 20 percent of available solar radiation, and separate mechanisms are needed to convert the stored energy to usable electricity for the commercial power grid.

But while nanosized antennas have shown promise in theory, scientists have lacked the technology required to construct and test them. The fabrication process is immensely challenging. The nano-antennas – known as “rectennas” because of their ability to both absorb and rectify solar energy from alternating current to direct current – must be capable of operating at the speed of visible light and be built in such a way that their core pair of electrodes is a mere 1 or 2 nanometers apart, a distance of approximately one millionth of a millimeter, or 30,000 times smaller than the diameter of human hair.

A potential breakthrough lies in a novel fabrication process called selective area atomic layer deposition (ALD) that was developed by Willis, an associate professor of chemical and biomolecular engineering and the previous director of UConn’s Chemical Engineering Program

It is through atomic layer deposition that scientists can finally fabricate a working rectenna device. In a rectenna device, one of the two interior electrodes must have a sharp tip, similar to the point of a triangle. The secret is getting the tip of that electrode within one or two nanometers of the opposite electrode, something similar to holding the point of a needle to the plane of a wall. Before the advent of ALD, existing lithographic fabrication techniques had been unable to create such a small space within a working electrical diode. Using sophisticated electronic equipment such as electron guns, the closest scientists could get was about 10 times the required separation. Through atomic layer deposition, Willis has shown he is able to precisely coat the tip of the rectenna with layers of individual copper atoms until a gap of about 1.5 nanometers is achieved. The process is self-limiting and stops at 1.5 nanometer separation.



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