Showing posts with label plasma wave terahertz detector. Show all posts
Showing posts with label plasma wave terahertz detector. Show all posts

Friday, December 18, 2015

Abstract-Plasma-wave Terahertz detection mediated by topological insulators surface states




Nano Lett., Just Accepted Manuscript
DOI: 10.1021/acs.nanolett.5b02901
Publication Date (Web): December 17, 2015
Copyright © 2015 American Chemical Society

http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b02901

Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave-functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we activate, probe and exploit the collective electronic excitation of TSS in the Dirac cone. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the “activated” TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics.

Saturday, August 3, 2013

Abstract-Current steering detection scheme of three terminal antenna-coupled terahertz field effect transistor detectors




An antenna-coupled field effect transistor (FET) as a plasma wave terahertz detector is used with the current steering to record separately the gate–source and gate–drain photoresponses and their phase sensitive combination. This method is based on the observation that the plasmon–terminal coupling is cut off in saturation, resulting in only one-sided sensitivity. A polarimetric example is presented with intensity and polarization angle reconstruction using a single three-terminal antenna-coupled Si-metal-oxide semiconductor FET (MOSFET). The technique is applicable to various detection schemes and technologies (high electron mobility transistors and GaAs-, GaN-, and Si-MOSFETs), and other application possibilities are discussed.
© 2013 Optical Society of America