Showing posts with label Miriam Vitiello. Show all posts
Showing posts with label Miriam Vitiello. Show all posts

Tuesday, November 3, 2020

New lasers that fire terahertz beams could propel medical imaging and contraband detection

 

  A terahertz laser sits on top of a small square cooler. The laser could enable new portable medical       diagnostics and explosive detectors.

 
ALI KHALATPOUR/MASSACHUSETTS INSTITUTE OF TECHNOLOGY
https://www.sciencemag.org/news/2020/11/new-lasers-fire-terahertz-beams-could-propel-medical-imaging-and-contraband-detection

 Robert F. Service

Compact, chip-based lasers have conquered much of the electromagnetic spectrum, from ultraviolet to infrared, enabling technologies from digital communications and barcode readers to laser pointers and printers. But one key region of the spectrum remained untamed: the terahertz band, which lies between infrared light and microwaves. Engineers hankered for a ready source of terahertz radiation, which can penetrate opaque objects and probe chemical fingerprints inside. But compact terahertz lasers have only worked at ultralow temperatures, limiting them mostly to laboratory settings.

No longer. In today’s issue of Nature Photonics, researchers report creating a grain-of-rice–size terahertz laser on a chip that operates at 250 K, or –23°C, within reach of a plug-in cooler the size of a cracker.

“This is a great achievement,” says Miriam Vitiello, a condensed matter physicist at the Nanoscience Institute of Italy’s National Research Council. “It has been a long-term goal in the community to push up the temperature of terahertz lasers,” she adds. “There is now a plethora of applications that can be done,” from medical imaging to explosives detection at airports

Standard chip-based lasers generate their photons when electrons fall into electron vacancies within a semiconductor alloy, whose makeup determines the color. Gallium nitride, for example, emits blue light, whereas gallium arsenide emits red. However, no semiconductor alloys emit photons in the terahertz range. (“Terahertz” refers to the light’s frequency: trillions of cycles per second.) In 1994, researchers at AT&T Bell Labs created a new kind of laser in which the semiconductor’s structure, not just its chemistry, determined the wavelength. Called a quantum cascade laser (QCL), it contained hundreds of layers of semiconductors of precise thicknesses. Electrons injected into the structure cascade down hundreds of energy steps, shedding a photon at each one. Those photons were infrared in the first QCL, but in 2002 researchers in Italy and the United Kingdom created QCL lasers that emitted terahertz photons.

Those devices needed to be chilled to 50 K, but last year, researchers led by physicist Jérôme Faist at ETH Zurich unveiled a terahertz QCL made up of hundreds of alternating layers of gallium arsenide and aluminum gallium arsenide (AlGaAs) that works at 210 K. It still required bulky and expensive cryogenic coolers, however.

At higher temperature the electrons leap the barriers between layers rather than cascading through the structure one step at a time. “Over-the-barrier electron leakage was the killer,” says Qing Hu, an electrical engineer at the Massachusetts Institute of Technology. So Hu and his colleagues added more aluminum to the AlGaAs barriers in hopes of better confining the electrons. Hu’s team also had to prevent electrons from interacting in a way that caused them to leak through the AlGaAs barriers.

Now, Hu’s team has shown that by tailoring its layered structure even more precisely—some layers were just seven atoms thick—it could make electrons behave at temperatures warm enough to be reached with standard compact thermoelectric coolers. What’s more, Hu says, the same strategy should enable the team to eventually make room temperature terahertz lasers.

Room temperature terahertz sources could be paired with terahertz detectors that also work at room temperature, which Vitiello and other researchers are now developing. That marriage could lead to technologies such as terahertz imagers able to distinguish skin cancer from normal tissue without a biopsy or watch airline passengers and cargo for hidden explosives, illegal drugs, and even pharmaceutical fakes. Faist says: “We have hoped for this for a very long time. 

Thursday, September 7, 2017

Abstract-Spectral purity and tunability of terahertz quantum cascade laser sources based on intracavity difference-frequency generation



Luigi Consolino.  Seungyong Jung,  Annamaria Campa, Michele De Regis, Shovon Pal, Jae Hyun Kim, Kazuue Fujita, Akio Ito, Masahiro Hitaka, Saverio Bartalini, Paolo De Natale, Mikhail A. Belkin, Miriam Serena Vitiello,

http://advances.sciencemag.org/content/3/9/e1603317


Terahertz sources based on intracavity difference-frequency generation in mid-infrared quantum cascade lasers (THz DFG-QCLs) have recently emerged as the first monolithic electrically pumped semiconductor sources capable of operating at room temperature across the 1- to 6-THz range. Despite tremendous progress in power output, which now exceeds 1 mW in pulsed and 10 μW in continuous-wave regimes at room temperature, knowledge of the major figure of merits of these devices for high-precision spectroscopy, such as spectral purity and absolute frequency tunability, is still lacking. By exploiting a metrological grade system comprising a terahertz frequency comb synthesizer, we measure, for the first time, the free-running emission linewidth (LW), the tuning characteristics, and the absolute center frequency of individual emission lines of these sources with an uncertainty of 4 × 10−10. The unveiled emission LW (400 kHz at 1-ms integration time) indicates that DFG-QCLs are well suited to operate as local oscillators and to be used for a variety of metrological, spectroscopic, communication, and imaging applications that require narrow-LW THz sources.

Friday, June 16, 2017

CNR-Institute of Nanoscience and University of Pisa obtained new Terahertz laser




An innovative laser, capable of emitting a very focused beam has been obtained thanks to the double nature of the Terahertz waves. The study, published in Light: Science & Applications, was carried out by a group of researchers from CNR NANO - the Nanoscience Institute of the National Research Council and the University of Pisa, in collaboration with SNS - Scuola Normale Superiore and the University of Cambridge.
Terahertz waves, which easily penetrate plastic, textiles and other materials, are the new frontier in radiology applied to the detection of hidden weapons or bio-agents, or defects in materials, packaging materials or artwork.
Terahertz waves are electromagnetic waves “in between” microwaves and infrared light and have a hybrid nature: they propagate with the properties of waves – like radio waves – and with those of light. That is why they can be manipulated, combining the techniques of these two fields, using both antennas and lenses or mirrors.
This is what was done in the new laser by Luca MasiniAlessandro PitantiLorenzo BaldacciMiriam Vitiello from CNR NANO, coordinated by Alessandro Tredicucci, University of Pisa, with the aim to generate a highly collimated Terahertz wave beam to overcome the limits of microlasers available today.
"The original idea" – explained Luca Masini from CNR NANO and SNS – "is to use the two natures of Terahertz radiation in one device: that of light and that of microwavesIn fact, to generate the radiation, the device treats it as if it were light, using a disk of artificial material consisting of semiconductor layers, whereas, to propagate it outwards, it manipulates it like a wave, using an embedded gold antenna. The result is a vertical and very focused emission that allows this laser to be used in devices for the spectroscopic analysis of materials and to be integrated into the new miniaturized laboratories, the so-called Labs-On-a-Chip”.
Terahertz waves, considered to be the X-rays of the future for the great potential in imaging applications (from body scanners to poison detection, to the recent water-saving applications), coupled with the low health risks, are the new frontier in photonics.
The laser was developed in the context of the European ERC SouLMan project led by Alessandro Tredicucci, University of Pisa, who said: "Generating Terahertz radiation has been a scientific challenge for many years. Now, the new challenge is to create a technology with increasingly less complex devices. Our laser, which for the first time uses a hybrid approach, goes in this direction as it allows the miniaturization of the device and a reduction of power consumption for its operation."
Publication date 06/16/2017
Source 

Friday, December 18, 2015

Abstract-Plasma-wave Terahertz detection mediated by topological insulators surface states




Nano Lett., Just Accepted Manuscript
DOI: 10.1021/acs.nanolett.5b02901
Publication Date (Web): December 17, 2015
Copyright © 2015 American Chemical Society

http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b02901

Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave-functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we activate, probe and exploit the collective electronic excitation of TSS in the Dirac cone. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the “activated” TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics.

Friday, August 14, 2015

Abstract-Black Phosphorus Terahertz Photodetectors


  • http://onlinelibrary.wiley.com/doi/10.1002/adma.201502052/abstract
  • The first room-temperature terahertz (THz)-frequency nanodetector exploiting a 10 nm thick flake of exfoliated crystalline black phosphorus as an active channel of a field-effect transistor, is devised. By engineering and embedding planar THz antennas for efficient light harvesting, the authors provide the first technological demonstration of a phosphorus-based active THz device.



Tuesday, July 21, 2015

SPIE-Room-temperature terahertz detection


Field-effect transistors based on semiconductor nanowires can operate as fast and sensitive plasma-wave terahertz detectors that are versatile and easy to grow.
21 July 2015, SPIE Newsroom. DOI: 10.1117/2.1201506.005956

One-dimensional (1D) nanostructure devices are at the forefront of studies on future electronics, although issues such as massive parallelization, doping control, surface effects, and compatibility with silicon industrial requirements are still open challenges. Recent progress in controlling the composition and shape of nanowire (NW)-based heterostructures makes them ideal building blocks for implementing rectifying diodes or plasma-wave detectors that could operate well into the terahertz (THz), thanks to their typical achievable attofarad-order capacitance.
Plasma-wave THz detectors exploit the rectification of the incoming electromagnetic field by hydrodynamic nonlinearities in the channel of a field-effect transistor (FET).1 Terahertz radiation between the gate (G) and source (S) electrodes of a FET induces an AC field, giving rise to modulations in the carrier density and drift velocity. These oscillations generate a driving longitudinal electric field through the channel. If this simultaneous modulation of carrier density and drift velocity occurs in an asymmetric structure, a DC voltage signal, whose amplitude is proportional to the intensity of the incoming radiation, results at the drain (D) electrode (see Figure 1). The required asymmetry can be provided by shaping the S and D electrodes differently,2 by driving a current through the device, or by realizing an inherently asymmetric channel playing with material morphology, composition, or doping.3
 
Figure 1. Terahertz (THz) detection scheme. A planar antenna couples the electromagnetic radiation to the source (S) and gate (G) electrodes of a nanowire field-effect transistor (NW-FET) (above). An electron density oscillation (plasma wave) is excited within the transistor channel, rectifying the AC external field (below).
The as-generated density oscillations are spatially limited by the plasma-wave propagation distance (damping length, Ld), which is proportional to the carriers' mobility. At room temperature, Ld is typically much smaller than the channel length, Lch, and the devices are said to be operating in an overdamped regime. The condition Ld≪Lch represents a crucial advantage for high-frequency detection: carriers do not have to cross the whole channel ‘following’ the THz electric field for rectification to take place. Therefore, detectors realized in FET architectures can operate well above their cut-off frequency and present higher sensitivity, above 1THz, than transit-time-limited detectors such as Schottky barrier diodes (SBDs). Furthermore, FETs typically show faster response times than thermal detectors such as Golay cells, bolometers, and pyroelectric detectors.4
A semiconductor NW is ideal for building specific functionalities in a FET: NWs can be assembled with specific compositions, heterojunctions, and architectures, promising advanced performance at dimensions compatible with on-chip technologies. For device optimization, as well as exploring material-related parameters, it is also crucial to critically address the coupling mechanism between a THz field and subwavelength NW-FET by investigating planar antennas.
These considerations enabled us to devise a set of THz detectors in which we integrated homogeneous indium arsenide (InAs), heterostructured InAs/indium antimonide (InSb), and gradient-like doped tapered InAs NWs, grown by chemical beam epitaxy, into laterally gated FETs coupled to the THz beam via bow-tie, split-bow-tie, or four-leaf-clover-shaped (FLCS) planar dipole antennas.5, 6 For each device, we measured responsivity (Rν) and noise equivalent power (NEP) in the 0.26–0.38THz range.
Homogeneously doped InAs NWs (see Figures 2 and 3) showed the best performance (responsivity Rν≈120V/W and NEP ≈ 100pW/ # Hz) for specific values of gate voltage corresponding to the best trade-off between carrier density tunability, low resistivity, and optimum FET-to-antenna impedance matching: see Figure 2(c, d). In these devices the FET structure is made asymmetric by connecting the two halves of a dipole antenna between the G and S electrodes or, more generally, by employing different geometries or metals for the S and D electrodes.5
 
Figure 2. (a) Scanning electron microscope image of a ‘forest’ of indium arsenide (InAs) NWs. (b) NW-FET layout in lateral single-gate configuration. (c) Transconductance (source-drain current vs. gate voltage,ISDVG) and responsivity (Rν)characteristics as a function of gate voltage. Clear hysteresis is typically observed in NW-based detectors. (d) Noise equivalent power (NEP) as a function of gate voltage. The minimum NEP value is below 200pW/ # Hz.
 
Figure 3. (a) A broadband split-bow-tie and (b) a narrowband four-leaf-clover shape designed to be resonant at 0.3THz, mounted on two (nominally) identical NW-FETs. (c) Plot of responsivity as a function of THz frequency: the detector spectral response is greatly influenced by the antenna choice.
Tapered NW-based FETs are able to detect THz radiation even though a symmetric dipole antenna is patterned on the S and D electrodes. In this case, the asymmetry is provided by the gradient-like doping along the NW, obtained by adding a progressively smaller fraction of donor selenium atoms to the InAs lattice. Engineering an NW-FET in a gateless configuration with a single terminal for the rectified signal readout is a promising way to develop a compact multipixel detection and imaging system.3, 5
In addition to the variety of functionalities provided by an accurate choice of materials, the frequency response of NW-FETs can be tailored by engineering the antenna design to address specific spectral requirements. This further functionality has been explored by equipping our devices either with broadband (bow-tie or split-bow-tie) antennas—see Figure 3(a)—or with frequency-selective resonant (FLCS) antennas: see Figure 3(b). Figure 3(c) shows the photoresponse of two nominally identical devices, featuring a double-gate bow-tie and an FLCS antenna, respectively, as a function of incoming frequency: the main peak in the FLCS antenna spectrum shows a full width and half-maximum narrower than that of the bow-tie antenna.5, 6 To provide a concrete exploitation of our technology, we then employed the device of Figure 4(a) in a transmission imaging experiment. The 0.33THz beam was focused on the target object, and the transmitted power was detected in photovoltage configuration while keeping VG=0 (all electrodes were unbiased). The 400 × 700 pixel image of the target object (a poppy flower) was acquired with a time constant of 10ms. The THz scan is reported in Figure 4.
 
Figure 4. A false-color scan of the THz radiation transmitted by the corolla of a poppy flower, detected with the device shown in Figure 3(a) at a frequency of 292GHz.
In summary, by understanding the material-related parameters and antenna-related issues involved in realizing 1D NW-FETs, we have devised a powerful way to develop a novel generation of THz nanodetectors for high-resolution imaging and spectroscopy across the THz frequency range. The flexibility offered by semiconductor NWs makes them ideal active elements for the development of integrated multipixel THz arrays, promising to transform THz nanoelectronics. Taking advantage of the small capacitance, the flexibility offered by integrated nanoantennas, and the nanowire morphology/geometry, we are now working to develop compact arrays of nanowire THz detectors operating in the 1–5THz range.

Leonardo Viti, Daniele Ercolani, Lucia Sorba, Miriam Serena Vitiello
CNR - Istituto Nanoscienze
Pisa, Italy

References:
1. M. Dyakonov, M. Shur, Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid, IEEE Trans. Electron. Dev. 43(3), p. 380-387, 1996.
2. M. S. Vitiello, D. Coquillat, L. Viti, D. Ercolani, F. Teppe, A. Pitanti, F. Beltram, L. Sorba, W. Knap, A. Tredicucci, Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors, Nano Lett. 12, p. 96-101, 2012. doi:10.1021/nl2030486
3. L. Romeo, D. Coquillat, E. Husanu, D. Ercolani, A. Tredicucci, F. Beltram, L. Sorba, W. Knap, M. S. Vitiello, Terahertz photodetectors based on tapered semiconductor nanowires,Appl. Phys. Lett. 105, p. 231112, 2014. doi:10.1063/1.4903473
4. F. Sizov, A. Rogalski, THz detectors, Prog. Quant. Electron. 34, p. 278-347, 2010.doi:10.1016/j.pquantelec.2010.06.002
5. M. S. Vitiello, L. Viti, D. Coquillat, W. Knap, D. Ercolani, L. Sorba, One dimensional semiconductor nanostructures: an effective active material for terahertz detection, APL Mater. 3, p. 026104, 2015. doi:10.1063/1.4906878
6. L. Viti, D. Coquillat, D. Ercolani, L. Sorba, W. Knap, M. S. Vitiello, Nanowire terahertz detectors with a resonant four-leaf-clover-shaped antenna, Opt. Express 22, p. 8996-9003, 2014. doi:10.1364/OE.22.008996