Showing posts with label V. A. Saroka. Show all posts
Showing posts with label V. A. Saroka. Show all posts

Monday, April 8, 2019

Abstract-Interband transitions in narrow-gap carbon nanotubes and graphene nanoribbons


R. R. HartmannV. A. SarokaM. E. Portnoi

https://arxiv.org/abs/1903.10544


We use the robust nearest-neighbour tight-binding approximation to study on the same footing interband dipole transitions in narrow-bandgap carbon nanotubes and graphene nanoribbons. It is demonstrated that curvature effects in metallic single-walled carbon nanotubes and edge effects in gapless graphene nanoribbons not only open up bang gaps, which typically correspond to THz frequencies, but also result in a giant enhancement of the probability of optical transitions across these gaps. Moreover, the matrix element of the velocity operator for these transitions has a universal value (equal to the Fermi velocity in graphene) when the photon energy coincides with the band-gap energy. Upon increasing the excitation energy, the transition matrix element first rapidly decreases (for photon energies remaining in the THz range but exceeding two band gap energies it is reduced by three orders of magnitude), and thereafter it starts to increase proportionally to the photon frequency. A similar effect occurs in an armchair carbon nanotube with a band gap opened and controlled by a magnetic field applied along the nanotube axis. There is a direct correspondence between armchair graphene nanoribbons and single-walled zigzag carbon nanotubes. The described sharp photon-energy dependence of the transition matrix element together with the van Hove singularity at the band gap edge of the considered quasi-one-dimensional systems make them promising candidates for active elements of coherent THz radiation emitters. The effect of Pauli blocking of low-energy interband transitions caused by residual doping can be suppressed by creating a population inversion using high-frequency (optical) excitation.
https://arxiv.org/abs/1903.10544

Sunday, December 31, 2017

Abstract-Tuning terahertz transitions in a double-gated quantum ring



T. P. Collier, V. A. Saroka, and M. E. Portnoi


We theoretically investigate the optical functionality of a semiconducting quantum ring manipulated by two electrostatic lateral gates used to induce a double quantum well along the ring. The well parameters and corresponding interlevel spacings, which lie in the THz range, are highly sensitive to the gate voltages. Our analysis shows that selection rules for interlevel dipole transitions, caused by linearly polarized excitations, depend on the polarization vector angle with respect to the gates. In striking difference from the conventional symmetric double well potential, the ring geometry permits polarization-dependent transitions between the ground and second excited states, allowing the use of this structure in a three-level lasing scheme.
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure