Abstract-Zener Tunneling Breakdown in Phase-Change Materials Revealed by Intense Terahertz Pulses

Yasuyuki Sanari, Takehiro Tachizaki, Yuta Saito, Kotaro Makino, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Koichiro Tanaka, Yoshihiko Kanemitsu, Muneaki Hase, and Hideki Hirori

https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.121.165702

We have systematically investigated the spatial and temporal dynamics of crystallization that occur in the phase-change material ${\mathrm{Ge}}_2{\mathrm{Sb}}_2{\mathrm{Te}}_5$ upon irradiation with an intense terahertz (THz) pulse. THz-pump–optical-probe spectroscopy revealed that Zener tunneling induces a nonlinear increase in the conductivity of the crystalline phase. This fact causes the large enhancement of electric field associated with the THz pulses only at the edge of the crystallized area. The electric field concentrating in this area causes a temperature increase via Joule heating, which in turn leads to nanometer-scale crystal growth parallel to the field and the formation of filamentary conductive domains across the sample.

Abstract-Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy

Valynn Katrine Mag-usara, Stefan Funkner, Gudrun Niehues, Elizabeth Ann Prieto, Maria Herminia Balgos, Armando Somintac, Elmer Estacio, Arnel Salvador, Kohji Yamamoto, Muneaki Hase, and Masahiko Tani

https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-23-26175

We present the use of a “double optical pump” technique in terahertz time-domain emission spectroscopy as an alternative method to investigate the lifetime of photo-excited carriers in semiconductors. Compared to the commonly employed optical pump-probe transient photo-reflectance, this non-contact and room temperature characterization technique allows relative ease in achieving optical alignment. The technique was implemented to evaluate the carrier lifetime in low temperature-grown gallium arsenide (LT-GaAs). The carrier lifetime values deduced from “double optical pump” THz emission decay curves show good agreement with data obtained from standard transient photo-reflectance measurements on the same LT-GaAs samples grown at 250 °C and 310 °C.

© 2016 Optical Society of America

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Abstract-Anisotropic lattice response induced by a linearly-polarized femtosecond optical pulse excitation in interfacial phase change memory material

Kotaro Makino

, Yuta Saito

, Paul Fons

, Alexander V. Kolobov

, Takashi Nakano

, Junji Tominaga

 & Muneaki Hase

http://www.nature.com/articles/srep19758

Optical excitation of matter with linearly-polarized femtosecond pulses creates a transient non-equilibrium lattice displacement along a certain direction. Here, the pump and probe pulse polarization dependence of the photo-induced ultrafast lattice dynamics in (GeTe)2/(Sb2Te3)4interfacial phase change memory material is investigated under obliquely incident conditions. Drastic pump polarization dependence of the coherent phonon amplitude is observed when the probe polarization angle is parallel to the c–axis of the sample, while the pump polarization dependence is negligible when the probe polarization angle is perpendicular to the c–axis. The enhancement of phonon oscillation amplitude due to pump polarization rotation for a specific probe polarization angle is only found in the early time stage (≤2 ps). These results indicate that the origin of the pump and probe polarization dependence is dominantly attributable to the anisotropically-formed photo-excited carriers which cause the directional lattice dynamics.

Research team says communication technologies including smartphones and laptops could now be 1,000 times faster

http://www.nanowerk.com/news/newsid=24516.php (Nanowerk News) Many of the communication tools of today rely on the function of light or, more specifically, on applying information to a light wave. Up until now, studies on electronic and optical devices with materials that are the foundations of modern electronics—such as radio, TV, and computers—have generally relied on nonlinear optical effects, producing devices whose bandwidth has been limited to the gigahertz (GHz) frequency region. (Hertz stands for cycles per second of a periodic phenomenon, in this case 1billion cycles). Thanks to research performed at the University of Pittsburgh, a physical basis for terahertz bandwidth (THz, or 1 trillion cycles per second)—the portion of the electromagnetic spectrum between infrared and microwave light—has now been demonstrated.

In a paper published March 4 in Nature Photonics ("Frequency comb generation at terahertz frequencies by coherent phonon excitation in silicon"), Hrvoje Petek, a professor of physics and chemistry in Pitt's Kenneth P. Dietrich School of Arts and Sciences, and his colleague Muneaki Hase, a professor of applied physics at the University of Tsukuba in Japan and a visiting scientist in Petek's lab, detail their success in generating a frequency comb—dividing a single color of light into a series of evenly spaced spectral lines for a variety of uses—that spans a more than 100 terahertz bandwidth by exciting a coherent collective of atomic motions in a semiconductor silicon crystal.

"The ability to modulate light with such a bandwidth could increase the amount of information carried by more than 1,000 times when compared to the volume carried with today's technologies," says Petek. "Needless to say, this has been a long-awaited discovery in the field."

To investigate the optical properties of a silicon crystal, Petek and his team investigated the change in reflectivity after excitation with an intense laser pulse. Following the excitation, the team observed that the amount of reflected light oscillates at 15.6 THz, the highest mechanical frequency of atoms within a silicon lattice. This oscillation caused additional change in the absorption and reflection of light, multiplying the fundamental oscillation frequency by up to seven times to generate the comb of frequencies extending beyond 100 THz. Petek and his team were able to observe the production of such a comb of frequencies from a crystalline solid for the first time.

"Although we expected to see the oscillation at 15.6 THz, we did not realize that its excitation could change the properties of silicon in such dramatic fashion," says Petek. "The discovery was both the result of developing unique instrumentation and incisive analysis by the team members."

Petek notes the team's achievements are the result of developing experimental and theoretical tools to better understand how electrons and atoms interact in solids under intense optical excitation and of the invested interest by Pitt's Dietrich School in advanced instrumentation and laboratory infrastructure.

The team is currently investigating the coherent oscillation of electrons, which could further extend the ability of harnessing light-matter interactions from the terahertz- to the petahertz-frequency range. Petahertz is a unit of measure for very fast frequencies (1 quadrillion hertz).

Source: University of Pittsburgh