Abstract-Prototyping of Terahertz Metasurface by One-step Lithographically Defined Templating

 Shaolin Zhou,  Songlin Mu,  Salahuddin Raju, Clarissa Prawoto,  Xuexuan Ruan,  KungBo Ng, Mansun Chan,

https://ieeexplore.ieee.org/document/8340782/

To bypass the sophisticated procedure in existing techniques to produce the terahertz (THz) metasurface filter, a one-step lithographically defined templating method is proposed for rapid prototyping. Essentially, a simplified photolithography process is exploited and optimized first to release one freestanding template perforated with desired features, without any sacrificial layer or external force. The key idea is to impart an adequate degree of hydrophobicity to substrate to tune adhesion between substrate and template for a spontaneous release. Then the template-directed metallization by electroless plating gives rise to an intact freestanding metal mesh framework of THz metasurface filter. Spectral characterization by the THz frequency-domain spectroscopy shows good spectral selection behavior, which agrees adequately well with the numerical simulation by HFSS.

Abstract-Study progess on FET-based Terahertz wave generation and detection

Jin He,  Guoqing Hu,  Zhiping Zhou,   GuangJin Ma,  YanDong He, Mansun Chan,  Lei Song,

http://ieeexplore.ieee.org/document/7998867/

Extensive and much attention have been injected to Terahertz (THZ) technologies in recent years due to its potential application in remote sensing, biomedical, and space communication. Compare with others, FET based THZ devices have a lot of advantages such as frequency tunable, structure compact and room temperature workable. The work in the ULTRA group explored the field effect transistor-based THZ generation and detecting mechanism, simulation tool, compact modeling, size effect, energy band engineering, so to develop the FET-based THZ device physics theory, provide the new simulation tool, build an efficient compact model. The work deliverables will help device scientists and circuit designers deeply understand the pontential and function of the silicon-based FET application in the THZ field, know how to realize the optimized device performance from the fine processing technology and structure design.