Abstract-Distinctive Performance of Terahertz Photodetection Driven by Charge‐Density‐Wave Order in CVD‐Grown Tantalum Diselenide

Lin Wang,  Jin Wang,  Changlong Liu,   Huang Xu,  Ang Li,  Dacheng Wei,   Yunqi Liu,  Gang Chen,  Xiaoshuang Chen,  Wei Lu,

https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201905057?af=R

The quantum behavior of carriers in solid is the foundation of modern electronic and optoelectronic technology, but it is still facing huge challenges within inherited single‐particle quantum processes working at the millimeter wave/terahertz (THz) band. Here, a straightforward strategy for the direct detection of millimeter wave/THz photons in a sub‐wavelength metal‐TaSe2‐metal structure under strong interaction with a localized field of surface plasmon is proposed. By breaking the inversion symmetry under the perturbations of electric field and atomic reconstruction from van der Waals integration, the nonequilibrium electronic states under a radiant field can be manipulated in a collective fashion, leading to a large photocurrent responsivity over 40 A W−1 and noise equivalent power less than 1 pW Hz−1/2 even at room temperature. A more than 40‐fold enhancement in responsivity is achieved when transitioning from the normal phase to the CDW phase. The findings shed fresh light on the understanding of the delicate balance in the charge‐ordered phase, and facilitate the exploitation of a correlated electron system for optoelectronic applications in fields of security, remote sensing, and imaging.

Abstract-Towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors

Changlong Liu, Lei Du, Weiwei Tang, Dacheng Wei, Jinhua Li, Lin Wang, Gang Chen, Xiaoshuang Chen,  Wei Lu

https://www.nature.com/articles/s41427-018-0032-7

Graphene has been highly sought after as a potential candidate for hot-electron terahertz (THz) detection benefiting from its strong photon absorption, fast carrier relaxation, and weak electron-phonon coupling. Nevertheless, to date, graphene-based thermoelectric THz photodetection is hindered by low responsivity owing to relatively low photoelectric efficiency. In this work, we provide a straightforward strategy for enhanced THz detection based on antenna-coupled CVD graphene transistors with the introduction of symmetric paired fingers. This design enables switchable photodetection modes by controlling the interaction between the THz field and free hot carriers in the graphene-channel through different contacting configurations. Hence a novel “bias-field effect” can be activated, which leads to a drastic enhancement in THz detection ability with maximum responsivity of up to 280 V/W at 0.12 THz relative to the antenna area and a Johnson-noise limited minimum noise-equivalent power (NEP) of 100 pW/Hz0.5at room temperature. The mechanism responsible for the enhancement in the photoelectric gain is attributed to thermophotovoltaic instead of plasma self-mixing effects. Our results offer a promising alternative route toward scalable, wafer-level production of high-performance graphene detectors.