Abstract-Total Internal Reflection Geometry: Exploiting Total Internal Reflection Geometry for Terahertz Devices and Enhanced Sample Characterization

Qiushuo Sun, Xuequan Chen, Xudong Liu, Rayko I. Stantchev, Emma Pickwell‐MacPherson

https://onlinelibrary.wiley.com/doi/abs/10.1002/adom.201900535

To promote potential applications of terahertz (THz) technology, more advanced functional THz devices with high performance are needed, including modulators, polarizers, lenses, wave retarders, and antireflection coatings. This work summarizes recent progress in THz components built on functional materials including graphene, vanadium dioxide, and metamaterials. The key message is that, while the choice of materials used in such devices is important, the geometry in which they are employed also has a significant effect on the performance achieved. In particular, devices operating in total internal reflection geometry are reviewed, and it is explained how this geometry is able to be exploited to achieve a variety of THz devices with broadband operation.