- A. S. Reshetnikov I, A. Tsibizov, G. I. Kropotov, K. N. Tukmakov, V. S. Pavelyev,
A three-layer structure is fabricated on a low-resistance silicon substrate using plasma chemical etching. We study it experimentally and show that a substrate with such a structure can be used as an absorber of terahertz (THz) radiation in the frequency range of 0.5−2.0 THz. For this structure, absorbance in the indicated frequency range is measured to be more than 95%.
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