Abstract-Scalable terahertz generation by large-area optical rectification at 80 TW laser power

Dogeun Jang, Chul Kang, Seong Ku Lee, Jae Hee Sung, Chul-Sik Kee, Seung Woo Kang, and Ki-Yong Kim

(a) Experimental setup for high-energy terahertz generation from a large-aperture LN wafer. The inset shows the incident laser beam profile. (b) Laser spectral power (black line) and spectral phase (blue line). (c) Estimated laser pulse duration as a function of laser GDD. (d) Sample pyroelectric detector signal.

https://www.osapublishing.org/ol/abstract.cfm?uri=ol-44-22-5634

We demonstrate high-energy terahertz generation from a large-aperture (75-mm diameter) lithium niobate wafer by using a femtosecond laser with energy up to 2 J. This scheme utilizes optical rectification in a bulk lithium niobate crystal, where most terahertz energy is emitted from a thin layer of the rear surface. Despite its simple setup, this scheme can yield 0.19 mJ of terahertz energy with laser-to-terahertz conversion efficiencies of ∼10−4$\sim {10}^{-4}$, about 3 times better than ZnTe when pumped at 800 nm. The experimental setup is upscalable for multimillijoule terahertz generation with petawatt laser pumping.

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