Ruizhi Huang, Xiaoli Ji, Yiming Liao, Jingyu Peng, Ke Wang, Yue Xu, and Feng Yan
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| Fig. 1 (a) The schematic illustration of 3D stacked structure of dual-frequency CMOS THz detector and (b) Cross-section of the detector realized in standard CMOS technology. |
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-27-16-23250
Multi-frequency Terahertz (THz) detectors have shown great application potentials in THz imaging and sensing systems. For the first time to our knowledge, a novel dual-frequency THz detector with the stacked structure consisting of a silicon-based plasmonic antenna and a metal-based antenna in one compact unit is proposed and fabricated in standard CMOS technology. Compared with the metal antenna, the antenna based on heavy-doped poly-silicon materials enables the detector to excite localized surface plasmon resonance mode, making the effective absorption of the THz waves and thus resulting in the significant responsivity enhancement of the detector. The experimental results show a maximum voltage responsivity up to about 2000 V/W and 450 V/W, while the noise equivalence power is as low as 23 pW/Hz0.5and 110 pW/Hz0.5 for the silicon antenna and metal antenna at the frequency of 220 GHz and 650 GHz, respectively. The presented dual-frequency detector can be easily implemented in a small size in favor of high-density array integration.
© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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