Liang-Hui Du, Hong-Fu Zhu, Jiang Li, Qi-Wu Shi, Li-Guo Zhu
https://ieeexplore.ieee.org/document/8510388
We present a terahertz (THz) amplitude modulator with near perfect modulation depth based on the impedance matching method during the thermally induced insulator-metal transition (IMT) of VO 2 thin films. It has been observed that the impedance matching-induced THz amplitude modulation was sensitive to the resistance switching characteristics of the VO 2 thin films. With four orders of change in resistance of the properly designed VO 2 films during the IMT, we experimentally achieved a near perfect THz modulator with an intensity modulation depth of 99.7 % between the insulator phase of VO 2 and the impedance matching state, and intensity modulation depth of 99.94% between the impedance matching state and the metallic phase of VO 2 . The experimental results were well explained by numerical simulations based on the transfer matrix model.
No comments:
Post a Comment