Abstract-THz plasma wave instability in field effect transistor with electron diffusion current density

Hongmei Du, Liping Zhang,  Dongao Li,

http://iopscience.iop.org/article/10.1088/2058-6272/aacaef/pdf


The instability of plasma waves in rectangle Field Effect Transistors (FETs) is studied with electron diffusion current density by quantum hydrodynamic model in this paper. General dispersion relation including effect of quantum effects, external friction associated with electron scattering, electron exchange-correlation contributions and thermal motion of electrons were obtained for rectangle FETs. The electron diffusion current density term is considered for further analysis in this paper. It is found that the quantum effects, the electron diffusion current density and the thermal motion of electrons enhance the radiation power and frequencies. But the electron exchange-correlation contributions and the external friction associated with electron scattering reduce the radiation power and frequencies. Results showed that a transistor has advantages for the realization of practical terahertz sources.