Qinglong Meng, Yan Zhang, Zheqiang Zhong, Bin Zhang
https://www.tandfonline.com/doi/abs/10.1080/09500340.2018.1496288?journalCode=tmop20
We present optically tuneable broadband terahertz metamaterials consisting of photosensitive semiconductor material. The characteristics of semiconductor materials are very important for terahertz functional devices, which is strongly dependent on the photoexcited carriers in semiconductor materials. Based on the model of the generation of the carriers in semiconductor materials, the tuneability of the resonance frequency and resonance strength in terahertz metamaterials under the femtosecond laser pulse has been analysed. The experimental results of the transmissivities of several bare semiconductor materials show that GaAs semiconductor could be a potential candidate for broadband terahertz functional devices design. Moreover, the simulation results of the resonance frequency increase with the increase of the laser fluence, whereas the resonance strength near the resonance frequency is significantly weakened with the increase of the laser fluence. Meanwhile, the modulation depth can be reached approximately 90% at 1.24 THz. Our proposed broadband tuneable terahertz metamaterials have numerous potential applications, including terahertz modulator, absorber and switches.
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