Zhuang Li, Bukun Qi, Xiaohui Zhang, Saeed Zeinolabedinzadeh, Lei Sang, John D. Cressler
https://ieeexplore.ieee.org/document/8263134/
A 0.32-THz 7 × 7 SiGe HBT incoherent detector array with both horizontal and vertical polarization capability is implemented in 0.13-μm SiGe BiCMOS technology. The average responsivity of the detector is 2.7 and 2.49 kV/W from 316 to 324 GHz for the horizontal and vertical polarizations, respectively, with a corresponding noise equivalent power of 23.8 and 25.8 pW/√Hz at an IF of 78.125 kHz. The contrast of metallic objects with features below the diffraction limit is enhanced by utilizing this chip's polarization diversities.
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