Kamil Olejník, Tom Seifert, Zdeněk Kašpar, Vít Novák, Peter Wadley, Richard P. Campion, Manuel Baumgartner, Pietro G Gambardella, Petr Němec, Joerg Wunderlich, Jairo Sinova, Petr Kužel, Melanie Müller, Tobias Kampfrath, Tomas Jungwirth,
http://advances.sciencemag.org/content/4/3/eaar3566
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band.
- Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
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