Abstract-Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

Cyril P. Sadia, Lorenzo P. Lopez Jr., Ramon M.delos Santos, Joselito E. Muldera, Alexander E.De Los Reyes, Mae Agatha C.Tumanguil, Christopher T.Que, Valynn Katrine Mag-usara, Masahiko Tani, Armando S.Somintac,  Elmer S.Estacio, Arnel A.Salvador,

https://www.sciencedirect.com/science/article/pii/S0040609017309276

We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength.