Bao Xiao, Mengqin Zhu, Binbin Zhang, Jiangpeng Dong, Leilei Ji, Hui Yu, Xiaoyan Sun, Wanqi Jie, and Yadong Xu
https://www.osapublishing.org/ome/abstract.cfm?uri=ome-8-2-431&origin=search
Vanadium-doped ZnTe (ZnTe:V) crystals 30 mm in diameter and 45 mm in length were grown by the temperature gradient solution growth method. The band gap of as-grown ZnTe:V crystals was estimated to be about 2.22 eV. Infrared spectra exhibit a mean transmittance of 50%-60% in the wavenumber range from 500 cm−1 to 4000 cm−1. Compared with the intrinsic ZnTe crystal, the resistivity of ZnTe:V is increased 6-7 orders of magnitude up to 109 Ω·cm and the carrier concentration reduced from 1014 to 108 cm−3. Accordingly, the THz detection sensitivity is also enhanced by 20%-30%. The improvements on the optical and electrical properties were attributed to the compensation of Zn vacancies by the vanadium element.
© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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