Min Woo Ryu, Ramesh Patel, Esan Jang, Sang Hyo Ahn, Hyeong Ju Jeon, Mun Seok Choe, Eunmi Choi, Ki Jin Han, Kyung Rok Kim
http://ieeexplore.ieee.org/document/8117385/
We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular active antenna, which is designed for a 0.12-THz resonance frequency, we experimentally demonstrated the highly-enhanced responsivity (RV) > 1 kV/W (× 5) and reduced noise-equivalent power (NEP) <; 10 pW/Hz0.5 (× 1/10).
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