Zhong-Wei Shi,Xing-Xing Cao,Qi-Ye Wen, Tian-Long Wen, Qing-Hui Yang, Zhi Chen, Wen-Sheng Shi, Huai-Wu Zhang.
http://onlinelibrary.wiley.com/doi/10.1002/adom.201700620/full
As an attractive applications of terahertz (THz) radiation, imaging with THz technique stands at the focus of current interest. THz spatial modulators are key issue for fast imaging with a single detector. Here, for the first time, the silicon nanotip (SiNT) arrays are reported that can be utilized as antireflection layers for the THz wave to achieve a low-loss and spectrally broadband optical-driven THz modulator. Compared with the modulator fabricated with bare silicon, a 2–3-time larger modulation depth is achieved in SiNT modulator. Moreover, it is found that the intrinsic THz transmission of SiNT is as high as 90%, which is much higher than that of bare silicon. The theoretical simulation results reveal that a strong antireflection effect induced from SiNT layer plays a crucial role in enhancing the properties of modulator. The SiNT-based optical-driven THz modulator with low loss and high modulation depth is promising for potential application to THz imaging.
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