Amit Yadav, Andrei Gorodetsky, Eugene Avrutin, Ksenia A. Fedorova, Edik U. Rafailov
http://ieeexplore.ieee.org/document/8086621/
A broadband terahertz (THz) source is desirable for applications such as imaging, spectroscopy and security. Towards this, an InAs/GaAs quantum dot (QD) based photoconductive antenna (PCA) is a promising and compact solution for THz generation. Coherent THz radiation in the pulsed and the CW regime has been generated with a QD PCA under a resonant and off-resonant pumps [1, 2]. While photoconductivity of QD materials in mid- and far-IR at lower temperatures has been studied for cryogenic sensors and attributed to interlevel transitions, near-IE interband photoconductivity needs further investigation [3, 4]. In this work, we report on the photoconductive properties of an InAs/GaAs QD PCA pumped by a broadly-tunable InAs/GaAs QD external-cavity diode laser.
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