Fanqi Meng, Mark D. Thomson, Hartmut G. Roskos
http://ieeexplore.ieee.org/document/8066892/
We present an experimental investigation of the nonlinear response of acceptor impurities in semiconductors to coherent excitation with intense THz fields. In Zn-doped GaAs, we observed a well-defined saturation of the transition from the impurity ground state to the excited states and valence band. In B-doped Si, however, there is a clear indication of field-induced distortion of the impurity energy states: in the highly B-doped sample, an absorption band due to boron-carbon pairs (boron-X center) emerges and shows strong field-induced broadening and splitting. Similar effects were also observed in the substitutional boron impurity states at lower doping density
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