Biao Wang, Dong Wu, Hai Zhu, Huibin Zhou, Jian Wei, Nan Lin Wang, Jiasen Niu, Ping Zheng, Yingxin Wang, Yingying Niu, Yu Quan Su, Ziran Zhao
http://iopscience.iop.org/article/10.1088/2053-1583/aa939c/pdf
Light probe from Uv to THz is critical in photoelectronics and has great applications ranging from imaging, communication to medicine. However, the room temperature ultrabroadband photodetection across visible down to far-infrared is still challenging. The challenging arises mainly from the lack of suitable photoactive materials. Because that conventional semiconductors, such as silicon, have their photosensitive properties cut off by the bandgap and are transparent to spectrum at long-wavelength infrared side. Comparatively, the dielectrics with very narrow band-gap but maintain the semiconductor-like electrical conduction would have priorities for ultrabroadband photodetection. Here we report on EuSbTe3 is highly sensitive from ultraviolet directly to terahertz (THz) at room temperature. High photoresponsivities 1 ~ 8 A W-1 reached in our prototype EuSbTe3 detectors with low noise equivalent power (NEP) recorded, for instances ~ 150 pW
Hz-1/2 (at λ = 532 nm) and ~0.6 nW Hz-1/2 (at λ = 118.8 µm) respectively. Our results demonstrate a promising system with direct photosensitivity extending well into THz regime at room temperature, shed new light on exploring more sophisticated multi-band photoelectronics
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