Atsushi Nakanishi, Takashi Yasuda, Kazuki Horita, Hironori Takahashi,
https://link.springer.com/article/10.1007%2Fs10762-017-0430-x
We measured the thermal dependencies of the refractive index and the absorption coefficient of high-resistivity silicon. We found that the refractive index varied slightly with temperature, and the absorption coefficient was very low and remained approximately constant as the temperature was changed. As a result, the conditions for terahertz propagation in silicon could be controlled by changing the refractive index without any absorption loss. As one application of this effect, we developed a terahertz time delay generator that can generate a terahertz time delay by changing the temperature of the medium through which the terahertz beam passes, without the need for any mechanical delay. We demonstrated generation of a terahertz time delay of approximately 6.6 ps.
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