Xiaodong Wang, Yulu Chen, Bingbing Wang, Xiaoyao Chen, Fangmin Guo, Ming Pan,
http://ieeexplore.ieee.org/document/8009988/
In this paper, the structural model and the physical model of GaAs-based BIB THz detectors are constructed by means of numerical simulation. The effect of acceptor concentration on the dark current characteristics is investigated. Additionally, the optimal acceptor concentration corresponding to the maximum detectivity has been discussed from the application point of view
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